Investigation of Electrical Properties and Reliability of GaN-Based Micro-LEDs
In this paper, we report high-performance Micro-LEDs on sapphire substrates, with pixel size scaling to 20 µm and an ultra-high current density of 9902 A/cm<sup>2</sup>. The forward voltages (V<sub>F</sub>) of the devices ranged from 2.32 V to 2.39 V under an injection curren...
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| Format: | Article |
| Language: | English |
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MDPI AG
2020-04-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/10/4/689 |
| _version_ | 1797571417196199936 |
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| author | Ke Zhang Yibo Liu Hoi-sing Kwok Zhaojun Liu |
| author_facet | Ke Zhang Yibo Liu Hoi-sing Kwok Zhaojun Liu |
| author_sort | Ke Zhang |
| collection | DOAJ |
| description | In this paper, we report high-performance Micro-LEDs on sapphire substrates, with pixel size scaling to 20 µm and an ultra-high current density of 9902 A/cm<sup>2</sup>. The forward voltages (V<sub>F</sub>) of the devices ranged from 2.32 V to 2.39 V under an injection current density of 10 A/cm<sup>2</sup>. The size and structure-dependent effects were subsequently investigated to optimize the device design. The reliability of Micro-LED devices was evaluated under long-aging, high-temperature, and high-humidity conditions. It was found that Micro-LED devices can maintain comparable performance with an emission wavelength of about 445 nm and a full width at half maximum (FWHM) of 22 nm under extreme environments. Following this, specific analysis with four detailed factors of forward voltage, forward current, slope, and leakage current was carried out in order to show the influence of the different environments on different aspects of the devices. |
| first_indexed | 2024-03-10T20:39:07Z |
| format | Article |
| id | doaj.art-aeec5786c3cd4ad98d77882f120f6beb |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-10T20:39:07Z |
| publishDate | 2020-04-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-aeec5786c3cd4ad98d77882f120f6beb2023-11-19T20:48:14ZengMDPI AGNanomaterials2079-49912020-04-0110468910.3390/nano10040689Investigation of Electrical Properties and Reliability of GaN-Based Micro-LEDsKe Zhang0Yibo Liu1Hoi-sing Kwok2Zhaojun Liu3Department of Electrical and Electronic Engineering, The Southern University of Science and Technology, Shenzhen 518000, ChinaDepartment of Electrical and Electronic Engineering, The Southern University of Science and Technology, Shenzhen 518000, ChinaDepartment of Electrical and Electronic Engineering, The Southern University of Science and Technology, Shenzhen 518000, ChinaDepartment of Electrical and Electronic Engineering, The Southern University of Science and Technology, Shenzhen 518000, ChinaIn this paper, we report high-performance Micro-LEDs on sapphire substrates, with pixel size scaling to 20 µm and an ultra-high current density of 9902 A/cm<sup>2</sup>. The forward voltages (V<sub>F</sub>) of the devices ranged from 2.32 V to 2.39 V under an injection current density of 10 A/cm<sup>2</sup>. The size and structure-dependent effects were subsequently investigated to optimize the device design. The reliability of Micro-LED devices was evaluated under long-aging, high-temperature, and high-humidity conditions. It was found that Micro-LED devices can maintain comparable performance with an emission wavelength of about 445 nm and a full width at half maximum (FWHM) of 22 nm under extreme environments. Following this, specific analysis with four detailed factors of forward voltage, forward current, slope, and leakage current was carried out in order to show the influence of the different environments on different aspects of the devices.https://www.mdpi.com/2079-4991/10/4/689GaN-based micro-LEDsreliability testmicro-LED display |
| spellingShingle | Ke Zhang Yibo Liu Hoi-sing Kwok Zhaojun Liu Investigation of Electrical Properties and Reliability of GaN-Based Micro-LEDs Nanomaterials GaN-based micro-LEDs reliability test micro-LED display |
| title | Investigation of Electrical Properties and Reliability of GaN-Based Micro-LEDs |
| title_full | Investigation of Electrical Properties and Reliability of GaN-Based Micro-LEDs |
| title_fullStr | Investigation of Electrical Properties and Reliability of GaN-Based Micro-LEDs |
| title_full_unstemmed | Investigation of Electrical Properties and Reliability of GaN-Based Micro-LEDs |
| title_short | Investigation of Electrical Properties and Reliability of GaN-Based Micro-LEDs |
| title_sort | investigation of electrical properties and reliability of gan based micro leds |
| topic | GaN-based micro-LEDs reliability test micro-LED display |
| url | https://www.mdpi.com/2079-4991/10/4/689 |
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