Tunneling Current Variations in Small-Sized Devices Based on a Compact Threshold Voltage Model
Accurate modeling of threshold voltage is necessary in the integrated circuit design of strained silicon devices. Thoroughly researching the factors that affect threshold voltage and establishing a more precise threshold voltage model, can provide essential theoretical support for integrated circuit...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-10-01
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| Series: | Applied Sciences |
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| Online Access: | https://www.mdpi.com/2076-3417/13/20/11387 |
| _version_ | 1797574902236053504 |
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| author | Zhichao Zhao Tiefeng Wu Chunyu Zhou Miao Wang Yunfang Xi Qiuxia Feng |
| author_facet | Zhichao Zhao Tiefeng Wu Chunyu Zhou Miao Wang Yunfang Xi Qiuxia Feng |
| author_sort | Zhichao Zhao |
| collection | DOAJ |
| description | Accurate modeling of threshold voltage is necessary in the integrated circuit design of strained silicon devices. Thoroughly researching the factors that affect threshold voltage and establishing a more precise threshold voltage model, can provide essential theoretical support for integrated circuit design. By solving a Poisson equation, in this paper, we demonstrate a comprehensive physical model for the threshold voltage of strained Si NMOSFETs using the gradual channel approximation theory and a quasi-two-dimensional analysis. The model investigates the physical effects such as short-channel, narrow-channel, non-uniform doping, and drain-induced barrier lowering effects on the threshold voltage. After substituting the extracted parameters into the model, a comparison was made with experimental results to validate the accuracy and correctness of the established model. Additionally, variations in the tunneling current of small-sized devices were studied. The two models provide essential references for the analysis and design of strained Si large-scale integrated circuits. |
| first_indexed | 2024-03-10T21:28:37Z |
| format | Article |
| id | doaj.art-af1458f4d40f4c39b6af7e515ca03dbe |
| institution | Directory Open Access Journal |
| issn | 2076-3417 |
| language | English |
| last_indexed | 2024-03-10T21:28:37Z |
| publishDate | 2023-10-01 |
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| record_format | Article |
| series | Applied Sciences |
| spelling | doaj.art-af1458f4d40f4c39b6af7e515ca03dbe2023-11-19T15:31:31ZengMDPI AGApplied Sciences2076-34172023-10-0113201138710.3390/app132011387Tunneling Current Variations in Small-Sized Devices Based on a Compact Threshold Voltage ModelZhichao Zhao0Tiefeng Wu1Chunyu Zhou2Miao Wang3Yunfang Xi4Qiuxia Feng5School of Information and Control Engineering, Qingdao University of Technology, Qingdao 266520, ChinaSchool of Information and Control Engineering, Qingdao University of Technology, Qingdao 266520, ChinaSchool of Science, Yanshan University, Qinhuangdao 066000, ChinaSchool of Information and Control Engineering, Qingdao University of Technology, Qingdao 266520, ChinaSchool of Information and Control Engineering, Qingdao University of Technology, Qingdao 266520, ChinaSchool of Information and Control Engineering, Qingdao University of Technology, Qingdao 266520, ChinaAccurate modeling of threshold voltage is necessary in the integrated circuit design of strained silicon devices. Thoroughly researching the factors that affect threshold voltage and establishing a more precise threshold voltage model, can provide essential theoretical support for integrated circuit design. By solving a Poisson equation, in this paper, we demonstrate a comprehensive physical model for the threshold voltage of strained Si NMOSFETs using the gradual channel approximation theory and a quasi-two-dimensional analysis. The model investigates the physical effects such as short-channel, narrow-channel, non-uniform doping, and drain-induced barrier lowering effects on the threshold voltage. After substituting the extracted parameters into the model, a comparison was made with experimental results to validate the accuracy and correctness of the established model. Additionally, variations in the tunneling current of small-sized devices were studied. The two models provide essential references for the analysis and design of strained Si large-scale integrated circuits.https://www.mdpi.com/2076-3417/13/20/11387strained Si NMOSFETthreshold voltagephysical compact modelingtunneling current |
| spellingShingle | Zhichao Zhao Tiefeng Wu Chunyu Zhou Miao Wang Yunfang Xi Qiuxia Feng Tunneling Current Variations in Small-Sized Devices Based on a Compact Threshold Voltage Model Applied Sciences strained Si NMOSFET threshold voltage physical compact modeling tunneling current |
| title | Tunneling Current Variations in Small-Sized Devices Based on a Compact Threshold Voltage Model |
| title_full | Tunneling Current Variations in Small-Sized Devices Based on a Compact Threshold Voltage Model |
| title_fullStr | Tunneling Current Variations in Small-Sized Devices Based on a Compact Threshold Voltage Model |
| title_full_unstemmed | Tunneling Current Variations in Small-Sized Devices Based on a Compact Threshold Voltage Model |
| title_short | Tunneling Current Variations in Small-Sized Devices Based on a Compact Threshold Voltage Model |
| title_sort | tunneling current variations in small sized devices based on a compact threshold voltage model |
| topic | strained Si NMOSFET threshold voltage physical compact modeling tunneling current |
| url | https://www.mdpi.com/2076-3417/13/20/11387 |
| work_keys_str_mv | AT zhichaozhao tunnelingcurrentvariationsinsmallsizeddevicesbasedonacompactthresholdvoltagemodel AT tiefengwu tunnelingcurrentvariationsinsmallsizeddevicesbasedonacompactthresholdvoltagemodel AT chunyuzhou tunnelingcurrentvariationsinsmallsizeddevicesbasedonacompactthresholdvoltagemodel AT miaowang tunnelingcurrentvariationsinsmallsizeddevicesbasedonacompactthresholdvoltagemodel AT yunfangxi tunnelingcurrentvariationsinsmallsizeddevicesbasedonacompactthresholdvoltagemodel AT qiuxiafeng tunnelingcurrentvariationsinsmallsizeddevicesbasedonacompactthresholdvoltagemodel |