Effect of spin-orbit field on magnetization reversal in GaMnAs single layers with 4-fold in-plane magnetic anisotropy
Effect of spin-orbit-induced (SOI) field on magnetization reversal in ferromagnetic semiconductor GaMnAs films with 4-fold in-plane magnetic anisotropy has been investigated by planar Hall resistance (PHR) and anisotropic magnetoresistance (AMR) with current along the <110> and <100> cry...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2023-02-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/9.0000398 |
| _version_ | 1811154851262889984 |
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| author | Kyoul Han Kyung Jae Lee Sanghoon Lee Xinyu Liu M. Dobrowolska Jacek K. Furdyna |
| author_facet | Kyoul Han Kyung Jae Lee Sanghoon Lee Xinyu Liu M. Dobrowolska Jacek K. Furdyna |
| author_sort | Kyoul Han |
| collection | DOAJ |
| description | Effect of spin-orbit-induced (SOI) field on magnetization reversal in ferromagnetic semiconductor GaMnAs films with 4-fold in-plane magnetic anisotropy has been investigated by planar Hall resistance (PHR) and anisotropic magnetoresistance (AMR) with current along the <110> and <100> crystallographic directions, respectively. Field scan hysteresis of PHR and AMR measured with current of 2.5 mA were observed to be asymmetric respect to zero field, showing different transition fields between positive and negative field regions. In addition, the hysteresis asymmetry is reversed as the sign of the current is reversed from positive to negative. Such dependence of asymmetry on current polarity implies that the current-induced spin-orbit field, which is known to depend on the current direction, significantly affects magnetization reversal. The asymmetry observed for currents along [100], [010], [110], and [11̄0] crystallographic directions is fully consistent with the effects arising from the Dresselhaus-type SOI fields in GaMnAs films. |
| first_indexed | 2024-04-10T04:24:10Z |
| format | Article |
| id | doaj.art-af1b6cddf332495f9021c3ca1470ef1b |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-04-10T04:24:10Z |
| publishDate | 2023-02-01 |
| publisher | AIP Publishing LLC |
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| series | AIP Advances |
| spelling | doaj.art-af1b6cddf332495f9021c3ca1470ef1b2023-03-10T17:26:21ZengAIP Publishing LLCAIP Advances2158-32262023-02-01132025229025229-510.1063/9.0000398Effect of spin-orbit field on magnetization reversal in GaMnAs single layers with 4-fold in-plane magnetic anisotropyKyoul Han0Kyung Jae Lee1Sanghoon Lee2Xinyu Liu3M. Dobrowolska4Jacek K. Furdyna5Physics Department, Korea University, Seoul 136-701, Republic of KoreaPhysics Department, Korea University, Seoul 136-701, Republic of KoreaPhysics Department, Korea University, Seoul 136-701, Republic of KoreaDepartment of Physics and Astronomy, University of Notre Dame, Notre Dame, Indiana 46556, USADepartment of Physics and Astronomy, University of Notre Dame, Notre Dame, Indiana 46556, USADepartment of Physics and Astronomy, University of Notre Dame, Notre Dame, Indiana 46556, USAEffect of spin-orbit-induced (SOI) field on magnetization reversal in ferromagnetic semiconductor GaMnAs films with 4-fold in-plane magnetic anisotropy has been investigated by planar Hall resistance (PHR) and anisotropic magnetoresistance (AMR) with current along the <110> and <100> crystallographic directions, respectively. Field scan hysteresis of PHR and AMR measured with current of 2.5 mA were observed to be asymmetric respect to zero field, showing different transition fields between positive and negative field regions. In addition, the hysteresis asymmetry is reversed as the sign of the current is reversed from positive to negative. Such dependence of asymmetry on current polarity implies that the current-induced spin-orbit field, which is known to depend on the current direction, significantly affects magnetization reversal. The asymmetry observed for currents along [100], [010], [110], and [11̄0] crystallographic directions is fully consistent with the effects arising from the Dresselhaus-type SOI fields in GaMnAs films.http://dx.doi.org/10.1063/9.0000398 |
| spellingShingle | Kyoul Han Kyung Jae Lee Sanghoon Lee Xinyu Liu M. Dobrowolska Jacek K. Furdyna Effect of spin-orbit field on magnetization reversal in GaMnAs single layers with 4-fold in-plane magnetic anisotropy AIP Advances |
| title | Effect of spin-orbit field on magnetization reversal in GaMnAs single layers with 4-fold in-plane magnetic anisotropy |
| title_full | Effect of spin-orbit field on magnetization reversal in GaMnAs single layers with 4-fold in-plane magnetic anisotropy |
| title_fullStr | Effect of spin-orbit field on magnetization reversal in GaMnAs single layers with 4-fold in-plane magnetic anisotropy |
| title_full_unstemmed | Effect of spin-orbit field on magnetization reversal in GaMnAs single layers with 4-fold in-plane magnetic anisotropy |
| title_short | Effect of spin-orbit field on magnetization reversal in GaMnAs single layers with 4-fold in-plane magnetic anisotropy |
| title_sort | effect of spin orbit field on magnetization reversal in gamnas single layers with 4 fold in plane magnetic anisotropy |
| url | http://dx.doi.org/10.1063/9.0000398 |
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