Electric control of exchange bias in Co/FeOx bilayer by resistive switching
Two types of electric control of exchange bias (EB) by resistive switching (RS), i.e. conductive-filament-RS (type I) and interface-barrier-RS (type II) were observed in the Si/SiO2Ti/Pt/FeOx/Co/ITO multilayer devices, which were fabricated by magnetron sputtering. It is difficult for the type I dev...
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2020-01-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5129506 |
| _version_ | 1818779329843167232 |
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| author | Lujun Wei Jiangtao Qu Rongkun Zheng Ruobai Liu Yuan Yuan Ji Wang Liang Sun Biao You Wei Zhang Qingyu Xu Jun Du |
| author_facet | Lujun Wei Jiangtao Qu Rongkun Zheng Ruobai Liu Yuan Yuan Ji Wang Liang Sun Biao You Wei Zhang Qingyu Xu Jun Du |
| author_sort | Lujun Wei |
| collection | DOAJ |
| description | Two types of electric control of exchange bias (EB) by resistive switching (RS), i.e. conductive-filament-RS (type I) and interface-barrier-RS (type II) were observed in the Si/SiO2Ti/Pt/FeOx/Co/ITO multilayer devices, which were fabricated by magnetron sputtering. It is difficult for the type I device to control EB, which may be due to that the quantity of conductive filaments is not enough to modify the antiferromagnetic structure of FeOx near the Co/FeOx interface. However, the electric control of EB can be accomplished in the type II device. Compared with low-resistance-state (LRS), the exchange bias field (HE) increases a little but the coercivity (HC) increases significantly at high-resistance-state (HRS). We consider that the migration of the oxygen vacancies under different voltages is able to mediate the interfacial barrier height, leading to the bipolar RS effect and the change of EB as well. This provides a way for designing new types of spintronic devices based on electric control. |
| first_indexed | 2024-12-18T11:58:54Z |
| format | Article |
| id | doaj.art-af1dc34d11b848a29ac608ad639202a9 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-18T11:58:54Z |
| publishDate | 2020-01-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-af1dc34d11b848a29ac608ad639202a92022-12-21T21:08:59ZengAIP Publishing LLCAIP Advances2158-32262020-01-01101015306015306-610.1063/1.5129506Electric control of exchange bias in Co/FeOx bilayer by resistive switchingLujun Wei0Jiangtao Qu1Rongkun Zheng2Ruobai Liu3Yuan Yuan4Ji Wang5Liang Sun6Biao You7Wei Zhang8Qingyu Xu9Jun Du10National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. ChinaSchool of Physics and Nano Institute, The University of Sydney, NSW 2006, AustraliaSchool of Physics and Nano Institute, The University of Sydney, NSW 2006, AustraliaNational Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. ChinaNational Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. ChinaNational Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. ChinaNational Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. ChinaNational Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. ChinaNational Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. ChinaSchool of Physics, Southeast University, Nanjing 211189, ChinaNational Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. ChinaTwo types of electric control of exchange bias (EB) by resistive switching (RS), i.e. conductive-filament-RS (type I) and interface-barrier-RS (type II) were observed in the Si/SiO2Ti/Pt/FeOx/Co/ITO multilayer devices, which were fabricated by magnetron sputtering. It is difficult for the type I device to control EB, which may be due to that the quantity of conductive filaments is not enough to modify the antiferromagnetic structure of FeOx near the Co/FeOx interface. However, the electric control of EB can be accomplished in the type II device. Compared with low-resistance-state (LRS), the exchange bias field (HE) increases a little but the coercivity (HC) increases significantly at high-resistance-state (HRS). We consider that the migration of the oxygen vacancies under different voltages is able to mediate the interfacial barrier height, leading to the bipolar RS effect and the change of EB as well. This provides a way for designing new types of spintronic devices based on electric control.http://dx.doi.org/10.1063/1.5129506 |
| spellingShingle | Lujun Wei Jiangtao Qu Rongkun Zheng Ruobai Liu Yuan Yuan Ji Wang Liang Sun Biao You Wei Zhang Qingyu Xu Jun Du Electric control of exchange bias in Co/FeOx bilayer by resistive switching AIP Advances |
| title | Electric control of exchange bias in Co/FeOx bilayer by resistive switching |
| title_full | Electric control of exchange bias in Co/FeOx bilayer by resistive switching |
| title_fullStr | Electric control of exchange bias in Co/FeOx bilayer by resistive switching |
| title_full_unstemmed | Electric control of exchange bias in Co/FeOx bilayer by resistive switching |
| title_short | Electric control of exchange bias in Co/FeOx bilayer by resistive switching |
| title_sort | electric control of exchange bias in co feox bilayer by resistive switching |
| url | http://dx.doi.org/10.1063/1.5129506 |
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