| Summary: | Transition metal dichalcogenides of type VX<sub>2</sub> (X = S, Se, Te) have recently attracted great interest as it has been predicted that they host ferromagnetism at room temperature. Whether ferromagnetism is indeed present is an open experimental question. An in-depth study of the structural and magnetoelectric properties of VTe<sub>2</sub> thin films is presented in this work. The VTe<sub>2</sub> thin films were grown through molecular beam epitaxy, which allows for precise control of thicknesses, ranging from several nanometers down to monolayers. The low-temperature magnetoelectric transport studies reveal no sign of intrinsic ferromagnetism. However, a transition from positive to negative magnetoresistance is present upon decreasing film thickness.
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