Thickness-Dependent Sign Change of the Magnetoresistance in VTe<sub>2</sub> Thin Films
Transition metal dichalcogenides of type VX<sub>2</sub> (X = S, Se, Te) have recently attracted great interest as it has been predicted that they host ferromagnetism at room temperature. Whether ferromagnetism is indeed present is an open experimental question. An in-depth study of the s...
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-09-01
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| Series: | Solids |
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| Online Access: | https://www.mdpi.com/2673-6497/3/3/33 |
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| author | Omar Concepción Liesbeth Mulder Daan H. Wielens Alexander Brinkman |
| author_facet | Omar Concepción Liesbeth Mulder Daan H. Wielens Alexander Brinkman |
| author_sort | Omar Concepción |
| collection | DOAJ |
| description | Transition metal dichalcogenides of type VX<sub>2</sub> (X = S, Se, Te) have recently attracted great interest as it has been predicted that they host ferromagnetism at room temperature. Whether ferromagnetism is indeed present is an open experimental question. An in-depth study of the structural and magnetoelectric properties of VTe<sub>2</sub> thin films is presented in this work. The VTe<sub>2</sub> thin films were grown through molecular beam epitaxy, which allows for precise control of thicknesses, ranging from several nanometers down to monolayers. The low-temperature magnetoelectric transport studies reveal no sign of intrinsic ferromagnetism. However, a transition from positive to negative magnetoresistance is present upon decreasing film thickness. |
| first_indexed | 2024-03-09T22:31:09Z |
| format | Article |
| id | doaj.art-af26dfbe638d4500b1bd26ae39c7b736 |
| institution | Directory Open Access Journal |
| issn | 2673-6497 |
| language | English |
| last_indexed | 2024-03-09T22:31:09Z |
| publishDate | 2022-09-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Solids |
| spelling | doaj.art-af26dfbe638d4500b1bd26ae39c7b7362023-11-23T18:56:55ZengMDPI AGSolids2673-64972022-09-013350050710.3390/solids3030033Thickness-Dependent Sign Change of the Magnetoresistance in VTe<sub>2</sub> Thin FilmsOmar Concepción0Liesbeth Mulder1Daan H. Wielens2Alexander Brinkman3MESA+ Institute for Nanotechnology, University of Twente, 7500 AE Enschede, The NetherlandsMESA+ Institute for Nanotechnology, University of Twente, 7500 AE Enschede, The NetherlandsMESA+ Institute for Nanotechnology, University of Twente, 7500 AE Enschede, The NetherlandsMESA+ Institute for Nanotechnology, University of Twente, 7500 AE Enschede, The NetherlandsTransition metal dichalcogenides of type VX<sub>2</sub> (X = S, Se, Te) have recently attracted great interest as it has been predicted that they host ferromagnetism at room temperature. Whether ferromagnetism is indeed present is an open experimental question. An in-depth study of the structural and magnetoelectric properties of VTe<sub>2</sub> thin films is presented in this work. The VTe<sub>2</sub> thin films were grown through molecular beam epitaxy, which allows for precise control of thicknesses, ranging from several nanometers down to monolayers. The low-temperature magnetoelectric transport studies reveal no sign of intrinsic ferromagnetism. However, a transition from positive to negative magnetoresistance is present upon decreasing film thickness.https://www.mdpi.com/2673-6497/3/3/33vanadium ditellurideferromagneticmagnetoresistance |
| spellingShingle | Omar Concepción Liesbeth Mulder Daan H. Wielens Alexander Brinkman Thickness-Dependent Sign Change of the Magnetoresistance in VTe<sub>2</sub> Thin Films Solids vanadium ditelluride ferromagnetic magnetoresistance |
| title | Thickness-Dependent Sign Change of the Magnetoresistance in VTe<sub>2</sub> Thin Films |
| title_full | Thickness-Dependent Sign Change of the Magnetoresistance in VTe<sub>2</sub> Thin Films |
| title_fullStr | Thickness-Dependent Sign Change of the Magnetoresistance in VTe<sub>2</sub> Thin Films |
| title_full_unstemmed | Thickness-Dependent Sign Change of the Magnetoresistance in VTe<sub>2</sub> Thin Films |
| title_short | Thickness-Dependent Sign Change of the Magnetoresistance in VTe<sub>2</sub> Thin Films |
| title_sort | thickness dependent sign change of the magnetoresistance in vte sub 2 sub thin films |
| topic | vanadium ditelluride ferromagnetic magnetoresistance |
| url | https://www.mdpi.com/2673-6497/3/3/33 |
| work_keys_str_mv | AT omarconcepcion thicknessdependentsignchangeofthemagnetoresistanceinvtesub2subthinfilms AT liesbethmulder thicknessdependentsignchangeofthemagnetoresistanceinvtesub2subthinfilms AT daanhwielens thicknessdependentsignchangeofthemagnetoresistanceinvtesub2subthinfilms AT alexanderbrinkman thicknessdependentsignchangeofthemagnetoresistanceinvtesub2subthinfilms |