Electron beam irradiation induced crystallization behavior of amorphous Ge2Sb2Te5 chalcogenide material
Abstract The crystallization of amorphous Ge2Sb2Te5 phase change material induced by electron beam irradiation was investigated by in-situ transmission electron microscopy (TEM). Amorphous matrix transformed into a partially crystalline state after being irradiated with a 200-keV electron beam for a...
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| Format: | Article |
| Language: | English |
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SpringerOpen
2019-12-01
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| Series: | Applied Microscopy |
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| Online Access: | https://doi.org/10.1186/s42649-019-0021-5 |
| Summary: | Abstract The crystallization of amorphous Ge2Sb2Te5 phase change material induced by electron beam irradiation was investigated by in-situ transmission electron microscopy (TEM). Amorphous matrix transformed into a partially crystalline state after being irradiated with a 200-keV electron beam for a long time. Real-time observation revealed that the crystallization of amorphous Ge2Sb2Te5 film occurs through a nucleation and growth mechanism under electron beam irradiation in TEM. While uncertainty from the 2D projection remains, the nuclei have been observed to grow preferentially along the < 100> direction. |
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| ISSN: | 2287-4445 |