Electron beam irradiation induced crystallization behavior of amorphous Ge2Sb2Te5 chalcogenide material
Abstract The crystallization of amorphous Ge2Sb2Te5 phase change material induced by electron beam irradiation was investigated by in-situ transmission electron microscopy (TEM). Amorphous matrix transformed into a partially crystalline state after being irradiated with a 200-keV electron beam for a...
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| Format: | Article |
| Language: | English |
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SpringerOpen
2019-12-01
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| Series: | Applied Microscopy |
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| Online Access: | https://doi.org/10.1186/s42649-019-0021-5 |
| _version_ | 1819059893571682304 |
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| author | Byeong-Seon An |
| author_facet | Byeong-Seon An |
| author_sort | Byeong-Seon An |
| collection | DOAJ |
| description | Abstract The crystallization of amorphous Ge2Sb2Te5 phase change material induced by electron beam irradiation was investigated by in-situ transmission electron microscopy (TEM). Amorphous matrix transformed into a partially crystalline state after being irradiated with a 200-keV electron beam for a long time. Real-time observation revealed that the crystallization of amorphous Ge2Sb2Te5 film occurs through a nucleation and growth mechanism under electron beam irradiation in TEM. While uncertainty from the 2D projection remains, the nuclei have been observed to grow preferentially along the < 100> direction. |
| first_indexed | 2024-12-21T14:18:20Z |
| format | Article |
| id | doaj.art-af3e38c525b246e8824072bfe5f055ae |
| institution | Directory Open Access Journal |
| issn | 2287-4445 |
| language | English |
| last_indexed | 2024-12-21T14:18:20Z |
| publishDate | 2019-12-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Applied Microscopy |
| spelling | doaj.art-af3e38c525b246e8824072bfe5f055ae2022-12-21T19:00:51ZengSpringerOpenApplied Microscopy2287-44452019-12-014911210.1186/s42649-019-0021-5Electron beam irradiation induced crystallization behavior of amorphous Ge2Sb2Te5 chalcogenide materialByeong-Seon An0School of Advanced Materials Science & Engineering, Sungkyunkwan UniversityAbstract The crystallization of amorphous Ge2Sb2Te5 phase change material induced by electron beam irradiation was investigated by in-situ transmission electron microscopy (TEM). Amorphous matrix transformed into a partially crystalline state after being irradiated with a 200-keV electron beam for a long time. Real-time observation revealed that the crystallization of amorphous Ge2Sb2Te5 film occurs through a nucleation and growth mechanism under electron beam irradiation in TEM. While uncertainty from the 2D projection remains, the nuclei have been observed to grow preferentially along the < 100> direction.https://doi.org/10.1186/s42649-019-0021-5Ge-Sb-Te based chalcogenideTransmission electron microscopyElectron beam irradiationCrystallization |
| spellingShingle | Byeong-Seon An Electron beam irradiation induced crystallization behavior of amorphous Ge2Sb2Te5 chalcogenide material Applied Microscopy Ge-Sb-Te based chalcogenide Transmission electron microscopy Electron beam irradiation Crystallization |
| title | Electron beam irradiation induced crystallization behavior of amorphous Ge2Sb2Te5 chalcogenide material |
| title_full | Electron beam irradiation induced crystallization behavior of amorphous Ge2Sb2Te5 chalcogenide material |
| title_fullStr | Electron beam irradiation induced crystallization behavior of amorphous Ge2Sb2Te5 chalcogenide material |
| title_full_unstemmed | Electron beam irradiation induced crystallization behavior of amorphous Ge2Sb2Te5 chalcogenide material |
| title_short | Electron beam irradiation induced crystallization behavior of amorphous Ge2Sb2Te5 chalcogenide material |
| title_sort | electron beam irradiation induced crystallization behavior of amorphous ge2sb2te5 chalcogenide material |
| topic | Ge-Sb-Te based chalcogenide Transmission electron microscopy Electron beam irradiation Crystallization |
| url | https://doi.org/10.1186/s42649-019-0021-5 |
| work_keys_str_mv | AT byeongseonan electronbeamirradiationinducedcrystallizationbehaviorofamorphousge2sb2te5chalcogenidematerial |