Coordinated optimization method for IGBT peak voltage suppression of mine-used inverter

At present, the methods of optimizing busbar structure parameters, changing gate drive resistance and designing absorption circuit are commonly used to suppress the peak voltage of insulated gate bipolar transistor (IGBT) in mine-used inverter caused by stray inductance. But the existing research ha...

Full description

Bibliographic Details
Main Authors: WANG Yue, SHI Han, RONG Xiang, JIANG Dezhi
Format: Article
Language:zho
Published: Editorial Department of Industry and Mine Automation 2022-12-01
Series:Gong-kuang zidonghua
Subjects:
Online Access:http://www.gkzdh.cn/article/doi/10.13272/j.issn.1671-251x.17884
_version_ 1797869078198616064
author WANG Yue
SHI Han
RONG Xiang
JIANG Dezhi
author_facet WANG Yue
SHI Han
RONG Xiang
JIANG Dezhi
author_sort WANG Yue
collection DOAJ
description At present, the methods of optimizing busbar structure parameters, changing gate drive resistance and designing absorption circuit are commonly used to suppress the peak voltage of insulated gate bipolar transistor (IGBT) in mine-used inverter caused by stray inductance. But the existing research has not revealed the coordination and unification relationship between the methods and their coordination and optimization criteria. In order to solve this problem, taking BPJ5-630-1140 type mine-used four-quadrant inverter as the research object, based on the analysis of the influence of stray inductance on the electric-thermal performance of IGBT, a coordinated optimization method of IGBT peak voltage suppression is proposed. ① The method analyzes the influence of busbar structure parameters and grid drive resistance on IGBT peak voltage and power loss. The results show that the peak voltage and power loss of IGBT increase with the AC busbar length increase and the AC busbar width decrease. With the increase of gate drive resistance, IGBT peak voltage decreases and power loss increases. ② The diode clamped absorption circuit is designed, which is verified by experiments to reduce the peak voltage and power loss of IGBT. ③ Considering that the AC busbar width has no effect on the layout and heat dissipation performance of IGBT, the gate drive resistance and the AC busbar length are selected as decision variables. The BP neural network and elitist non-dominated sorting genetic algorithm (BP-NSGAⅡ) are used to achieve multi-objective optimization of IGBT peak voltage, the maximum IGBT temperature and the maximum temperature of radiator surface. The experimented results show that when the maximum temperature of radiator surface is 55-65 ℃ and the maximum IGBT temperature is 74-80 ℃, the minimum IGBT peak voltage is 1861 V. The corresponding grid drive resistance is 5 Ω, the AC busbar length is 300 mm, and the AC busbar width is 200 mm. The optimized IGBT peak voltage of BPJ5-630-1140 type inventer is 1 856 V, which is 35% lower than 2 856 V before optimization. The IGBT peak voltage is effectively suppressed, and the operation reliability of the mine-used inverter is improved.
first_indexed 2024-04-10T00:05:53Z
format Article
id doaj.art-af7807f33fc8497895317bc1449c8b3a
institution Directory Open Access Journal
issn 1671-251X
language zho
last_indexed 2024-04-10T00:05:53Z
publishDate 2022-12-01
publisher Editorial Department of Industry and Mine Automation
record_format Article
series Gong-kuang zidonghua
spelling doaj.art-af7807f33fc8497895317bc1449c8b3a2023-03-17T01:00:54ZzhoEditorial Department of Industry and Mine AutomationGong-kuang zidonghua1671-251X2022-12-014812129136, 14310.13272/j.issn.1671-251x.17884Coordinated optimization method for IGBT peak voltage suppression of mine-used inverterWANG YueSHI HanRONG XiangJIANG DezhiAt present, the methods of optimizing busbar structure parameters, changing gate drive resistance and designing absorption circuit are commonly used to suppress the peak voltage of insulated gate bipolar transistor (IGBT) in mine-used inverter caused by stray inductance. But the existing research has not revealed the coordination and unification relationship between the methods and their coordination and optimization criteria. In order to solve this problem, taking BPJ5-630-1140 type mine-used four-quadrant inverter as the research object, based on the analysis of the influence of stray inductance on the electric-thermal performance of IGBT, a coordinated optimization method of IGBT peak voltage suppression is proposed. ① The method analyzes the influence of busbar structure parameters and grid drive resistance on IGBT peak voltage and power loss. The results show that the peak voltage and power loss of IGBT increase with the AC busbar length increase and the AC busbar width decrease. With the increase of gate drive resistance, IGBT peak voltage decreases and power loss increases. ② The diode clamped absorption circuit is designed, which is verified by experiments to reduce the peak voltage and power loss of IGBT. ③ Considering that the AC busbar width has no effect on the layout and heat dissipation performance of IGBT, the gate drive resistance and the AC busbar length are selected as decision variables. The BP neural network and elitist non-dominated sorting genetic algorithm (BP-NSGAⅡ) are used to achieve multi-objective optimization of IGBT peak voltage, the maximum IGBT temperature and the maximum temperature of radiator surface. The experimented results show that when the maximum temperature of radiator surface is 55-65 ℃ and the maximum IGBT temperature is 74-80 ℃, the minimum IGBT peak voltage is 1861 V. The corresponding grid drive resistance is 5 Ω, the AC busbar length is 300 mm, and the AC busbar width is 200 mm. The optimized IGBT peak voltage of BPJ5-630-1140 type inventer is 1 856 V, which is 35% lower than 2 856 V before optimization. The IGBT peak voltage is effectively suppressed, and the operation reliability of the mine-used inverter is improved.http://www.gkzdh.cn/article/doi/10.13272/j.issn.1671-251x.17884mine-used inverterinsulated gate bipolar transistorpeak voltage suppressiongrid drive resistancediode clamped absorption circuitbp neural network and elitist non-dominated sorting genetic algorithm
spellingShingle WANG Yue
SHI Han
RONG Xiang
JIANG Dezhi
Coordinated optimization method for IGBT peak voltage suppression of mine-used inverter
Gong-kuang zidonghua
mine-used inverter
insulated gate bipolar transistor
peak voltage suppression
grid drive resistance
diode clamped absorption circuit
bp neural network and elitist non-dominated sorting genetic algorithm
title Coordinated optimization method for IGBT peak voltage suppression of mine-used inverter
title_full Coordinated optimization method for IGBT peak voltage suppression of mine-used inverter
title_fullStr Coordinated optimization method for IGBT peak voltage suppression of mine-used inverter
title_full_unstemmed Coordinated optimization method for IGBT peak voltage suppression of mine-used inverter
title_short Coordinated optimization method for IGBT peak voltage suppression of mine-used inverter
title_sort coordinated optimization method for igbt peak voltage suppression of mine used inverter
topic mine-used inverter
insulated gate bipolar transistor
peak voltage suppression
grid drive resistance
diode clamped absorption circuit
bp neural network and elitist non-dominated sorting genetic algorithm
url http://www.gkzdh.cn/article/doi/10.13272/j.issn.1671-251x.17884
work_keys_str_mv AT wangyue coordinatedoptimizationmethodforigbtpeakvoltagesuppressionofmineusedinverter
AT shihan coordinatedoptimizationmethodforigbtpeakvoltagesuppressionofmineusedinverter
AT rongxiang coordinatedoptimizationmethodforigbtpeakvoltagesuppressionofmineusedinverter
AT jiangdezhi coordinatedoptimizationmethodforigbtpeakvoltagesuppressionofmineusedinverter