Study of Electrical Properties of p-PbSe/p-Si Heterojunction
Electrical properties of p-PbSe/p-Si heterojunction detector have beeninvestigated. The electrical properties under dark condition show a rectifyingbehaviour with low rectification factor, and exhibits soft breakdown reversecurrent.C-V characteristics suggest that the fabricated diode was abrupt typ...
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| Format: | Article |
| Language: | English |
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Unviversity of Technology- Iraq
2007-05-01
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| Series: | Engineering and Technology Journal |
| Online Access: | https://etj.uotechnology.edu.iq/article_181333_39c5cf2e8f28f6d453161da67adef917.pdf |
| Summary: | Electrical properties of p-PbSe/p-Si heterojunction detector have beeninvestigated. The electrical properties under dark condition show a rectifyingbehaviour with low rectification factor, and exhibits soft breakdown reversecurrent.C-V characteristics suggest that the fabricated diode was abrupt type, builtin potential determined by extrapolation from 1/C2-V curve to the point (V=0)and it was equal to (0.49V).Results of I-V characteristics under illumination conditions with reversebias voltage exhibit linear behavior with no saturation limit. |
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| ISSN: | 1681-6900 2412-0758 |