Study of Electrical Properties of p-PbSe/p-Si Heterojunction
Electrical properties of p-PbSe/p-Si heterojunction detector have beeninvestigated. The electrical properties under dark condition show a rectifyingbehaviour with low rectification factor, and exhibits soft breakdown reversecurrent.C-V characteristics suggest that the fabricated diode was abrupt typ...
Main Author: | |
---|---|
Format: | Article |
Language: | English |
Published: |
Unviversity of Technology- Iraq
2007-05-01
|
Series: | Engineering and Technology Journal |
Online Access: | https://etj.uotechnology.edu.iq/article_181333_39c5cf2e8f28f6d453161da67adef917.pdf |