Comprehensive Comparison of MOCVD- and LPCVD-SiN<sub>x</sub> Surface Passivation for AlGaN/GaN HEMTs for 5G RF Applications

Comprehensive Comparison of MOCVD- and LPCVD-SiN<sub>x</sub> Surface Passivation for AlGaN/GaN HEMTs for 5G RF Applications

Passivation is commonly used to suppress current collapse in AlGaN/GaN HEMTs. However, the conventional PECV-fabricated SiN<sub>x</sub> passivation layer is incompatible with the latest process, like the “passivation-prior-to-ohmic” method. Research attention has therefore turned to high...

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Bibliographic Details
Main Authors: Longge Deng, Likun Zhou, Hao Lu, Ling Yang, Qian Yu, Meng Zhang, Mei Wu, Bin Hou, Xiaohua Ma, Yue Hao
Format: Article
Language:English
Published: MDPI AG 2023-11-01
Series:Micromachines
Subjects:
AlGaN/GaN
high electron mobility transistors (HEMTs)
SiN<sub>x</sub> passivation
low-pressure chemical vapor deposition (LPCVD)
ohmic contact
SiN<sub>x</sub>/GaN interface
Online Access:https://www.mdpi.com/2072-666X/14/11/2104

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