Ultrahigh-Sensitive CMOS pH Sensor Developed in the BEOL of Standard 28 nm UTBB FDSOI

Ultrahigh-Sensitive CMOS pH Sensor Developed in the BEOL of Standard 28 nm UTBB FDSOI

This paper reports ultrahigh-sensitive and ultralow-power CMOS compatible pH sensors that are developed in the back-end-of-line (BEOL) of industrial 28-nm ultrathin body and buried oxide (UTBB) fully depleted silicon-on-insulator (FDSOI) transistors. Fabricating the sensing gate and the control gate...

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Bibliographic Details
Main Authors: Getenet Tesega Ayele, Stephane Monfray, Serge Ecoffey, Frederic Boeuf, Jean-Pierre Cloarec, Dominique Drouin, Abdelkader Souifi
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Aluminum oxide
back-end-of-line (BEOL)
capacitive coupling
extended gate
fully-depleted silicon-on-insulator (FDSOI)
ion-sensitive field-effect transistor (ISFET)
Online Access:https://ieeexplore.ieee.org/document/8449087/

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