Hybrid optical measurement technique for detection of defects in epitaxially grown 4H-SiC layers
Recent developments in power electronics require the use of new wide bandgap compound semiconductor. We demonstrate the use of the ellipsometry and white light interference microscopy to detect defects in epitaxially grown SiC layers on SiC substrates. Such hybrid optical metrology methods can be us...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
EDP Sciences
2022-01-01
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| Series: | EPJ Web of Conferences |
| Online Access: | https://www.epj-conferences.org/articles/epjconf/pdf/2022/10/epjconf_eosam2022_10001.pdf |
| _version_ | 1797990525258694656 |
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| author | Ermilova Elena Weise Matthias Hertwig Andreas |
| author_facet | Ermilova Elena Weise Matthias Hertwig Andreas |
| author_sort | Ermilova Elena |
| collection | DOAJ |
| description | Recent developments in power electronics require the use of new wide bandgap compound semiconductor. We demonstrate the use of the ellipsometry and white light interference microscopy to detect defects in epitaxially grown SiC layers on SiC substrates. Such hybrid optical metrology methods can be used to better understand the mechanism of the development of the defects as well as their effects on the material´s optoelectronic properties. |
| first_indexed | 2024-04-11T08:37:53Z |
| format | Article |
| id | doaj.art-afa4c072a06f42f3ac2a5210cf5c0449 |
| institution | Directory Open Access Journal |
| issn | 2100-014X |
| language | English |
| last_indexed | 2024-04-11T08:37:53Z |
| publishDate | 2022-01-01 |
| publisher | EDP Sciences |
| record_format | Article |
| series | EPJ Web of Conferences |
| spelling | doaj.art-afa4c072a06f42f3ac2a5210cf5c04492022-12-22T04:34:17ZengEDP SciencesEPJ Web of Conferences2100-014X2022-01-012661000110.1051/epjconf/202226610001epjconf_eosam2022_10001Hybrid optical measurement technique for detection of defects in epitaxially grown 4H-SiC layersErmilova Elena0Weise Matthias1Hertwig Andreas2Bundesanstalt für Materialforschung und -prüfung (BAM), Division 6.1 Surface Analysis and Interfacial ChemistryBundesanstalt für Materialforschung und -prüfung (BAM), Division 6.1 Surface Analysis and Interfacial ChemistryBundesanstalt für Materialforschung und -prüfung (BAM), Division 6.1 Surface Analysis and Interfacial ChemistryRecent developments in power electronics require the use of new wide bandgap compound semiconductor. We demonstrate the use of the ellipsometry and white light interference microscopy to detect defects in epitaxially grown SiC layers on SiC substrates. Such hybrid optical metrology methods can be used to better understand the mechanism of the development of the defects as well as their effects on the material´s optoelectronic properties.https://www.epj-conferences.org/articles/epjconf/pdf/2022/10/epjconf_eosam2022_10001.pdf |
| spellingShingle | Ermilova Elena Weise Matthias Hertwig Andreas Hybrid optical measurement technique for detection of defects in epitaxially grown 4H-SiC layers EPJ Web of Conferences |
| title | Hybrid optical measurement technique for detection of defects in epitaxially grown 4H-SiC layers |
| title_full | Hybrid optical measurement technique for detection of defects in epitaxially grown 4H-SiC layers |
| title_fullStr | Hybrid optical measurement technique for detection of defects in epitaxially grown 4H-SiC layers |
| title_full_unstemmed | Hybrid optical measurement technique for detection of defects in epitaxially grown 4H-SiC layers |
| title_short | Hybrid optical measurement technique for detection of defects in epitaxially grown 4H-SiC layers |
| title_sort | hybrid optical measurement technique for detection of defects in epitaxially grown 4h sic layers |
| url | https://www.epj-conferences.org/articles/epjconf/pdf/2022/10/epjconf_eosam2022_10001.pdf |
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