The Design Considerations and Challenges in MOS-Based Temperature Sensors: A Review

This review paper categorizes the state-of-the-art MOS (metal oxide semiconductor)-based temperature sensors according to their thermal sensing principles, including: type I, the logic, saturation and linear MOS-based temperature sensors; type II, the subthreshold MOS-based temperature sensors; and...

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Main Author: Shuang Xie
Format: Article
Language:English
Published: MDPI AG 2022-03-01
Series:Electronics
Subjects:
Online Access:https://www.mdpi.com/2079-9292/11/7/1019
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author Shuang Xie
author_facet Shuang Xie
author_sort Shuang Xie
collection DOAJ
description This review paper categorizes the state-of-the-art MOS (metal oxide semiconductor)-based temperature sensors according to their thermal sensing principles, including: type I, the logic, saturation and linear MOS-based temperature sensors; type II, the subthreshold MOS-based temperature sensors; and type III, the gate leakage-based temperature sensors. It also discusses in detail the design considerations and challenges of MOS-based temperature sensors, in terms of area, energy efficiency, supply voltage, inaccuracy, noise, as well as process and power supply variations. Based on the aforementioned discussions, the paper concludes that the future MOS-based temperature sensors will mostly likely be based on subthreshold MOS operation, with better trade-offs between area, energy efficiency and accuracy, and with reduced power supply sensitivity and level, as well as a lower-cost, fewer-point calibration method.
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spelling doaj.art-afc21ada7fb24ebbb25ebc7c1ee982cc2023-11-30T23:06:15ZengMDPI AGElectronics2079-92922022-03-01117101910.3390/electronics11071019The Design Considerations and Challenges in MOS-Based Temperature Sensors: A ReviewShuang Xie0School of Microelectronics, Shandong University, 1500 Shunhua Road, Jinan 250101, ChinaThis review paper categorizes the state-of-the-art MOS (metal oxide semiconductor)-based temperature sensors according to their thermal sensing principles, including: type I, the logic, saturation and linear MOS-based temperature sensors; type II, the subthreshold MOS-based temperature sensors; and type III, the gate leakage-based temperature sensors. It also discusses in detail the design considerations and challenges of MOS-based temperature sensors, in terms of area, energy efficiency, supply voltage, inaccuracy, noise, as well as process and power supply variations. Based on the aforementioned discussions, the paper concludes that the future MOS-based temperature sensors will mostly likely be based on subthreshold MOS operation, with better trade-offs between area, energy efficiency and accuracy, and with reduced power supply sensitivity and level, as well as a lower-cost, fewer-point calibration method.https://www.mdpi.com/2079-9292/11/7/1019MOStemperature sensorsubthreshold MOSgate leakagepower supply variations
spellingShingle Shuang Xie
The Design Considerations and Challenges in MOS-Based Temperature Sensors: A Review
Electronics
MOS
temperature sensor
subthreshold MOS
gate leakage
power supply variations
title The Design Considerations and Challenges in MOS-Based Temperature Sensors: A Review
title_full The Design Considerations and Challenges in MOS-Based Temperature Sensors: A Review
title_fullStr The Design Considerations and Challenges in MOS-Based Temperature Sensors: A Review
title_full_unstemmed The Design Considerations and Challenges in MOS-Based Temperature Sensors: A Review
title_short The Design Considerations and Challenges in MOS-Based Temperature Sensors: A Review
title_sort design considerations and challenges in mos based temperature sensors a review
topic MOS
temperature sensor
subthreshold MOS
gate leakage
power supply variations
url https://www.mdpi.com/2079-9292/11/7/1019
work_keys_str_mv AT shuangxie thedesignconsiderationsandchallengesinmosbasedtemperaturesensorsareview
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