The Design Considerations and Challenges in MOS-Based Temperature Sensors: A Review
This review paper categorizes the state-of-the-art MOS (metal oxide semiconductor)-based temperature sensors according to their thermal sensing principles, including: type I, the logic, saturation and linear MOS-based temperature sensors; type II, the subthreshold MOS-based temperature sensors; and...
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Format: | Article |
Language: | English |
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MDPI AG
2022-03-01
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Series: | Electronics |
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Online Access: | https://www.mdpi.com/2079-9292/11/7/1019 |
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author | Shuang Xie |
author_facet | Shuang Xie |
author_sort | Shuang Xie |
collection | DOAJ |
description | This review paper categorizes the state-of-the-art MOS (metal oxide semiconductor)-based temperature sensors according to their thermal sensing principles, including: type I, the logic, saturation and linear MOS-based temperature sensors; type II, the subthreshold MOS-based temperature sensors; and type III, the gate leakage-based temperature sensors. It also discusses in detail the design considerations and challenges of MOS-based temperature sensors, in terms of area, energy efficiency, supply voltage, inaccuracy, noise, as well as process and power supply variations. Based on the aforementioned discussions, the paper concludes that the future MOS-based temperature sensors will mostly likely be based on subthreshold MOS operation, with better trade-offs between area, energy efficiency and accuracy, and with reduced power supply sensitivity and level, as well as a lower-cost, fewer-point calibration method. |
first_indexed | 2024-03-09T11:58:49Z |
format | Article |
id | doaj.art-afc21ada7fb24ebbb25ebc7c1ee982cc |
institution | Directory Open Access Journal |
issn | 2079-9292 |
language | English |
last_indexed | 2024-03-09T11:58:49Z |
publishDate | 2022-03-01 |
publisher | MDPI AG |
record_format | Article |
series | Electronics |
spelling | doaj.art-afc21ada7fb24ebbb25ebc7c1ee982cc2023-11-30T23:06:15ZengMDPI AGElectronics2079-92922022-03-01117101910.3390/electronics11071019The Design Considerations and Challenges in MOS-Based Temperature Sensors: A ReviewShuang Xie0School of Microelectronics, Shandong University, 1500 Shunhua Road, Jinan 250101, ChinaThis review paper categorizes the state-of-the-art MOS (metal oxide semiconductor)-based temperature sensors according to their thermal sensing principles, including: type I, the logic, saturation and linear MOS-based temperature sensors; type II, the subthreshold MOS-based temperature sensors; and type III, the gate leakage-based temperature sensors. It also discusses in detail the design considerations and challenges of MOS-based temperature sensors, in terms of area, energy efficiency, supply voltage, inaccuracy, noise, as well as process and power supply variations. Based on the aforementioned discussions, the paper concludes that the future MOS-based temperature sensors will mostly likely be based on subthreshold MOS operation, with better trade-offs between area, energy efficiency and accuracy, and with reduced power supply sensitivity and level, as well as a lower-cost, fewer-point calibration method.https://www.mdpi.com/2079-9292/11/7/1019MOStemperature sensorsubthreshold MOSgate leakagepower supply variations |
spellingShingle | Shuang Xie The Design Considerations and Challenges in MOS-Based Temperature Sensors: A Review Electronics MOS temperature sensor subthreshold MOS gate leakage power supply variations |
title | The Design Considerations and Challenges in MOS-Based Temperature Sensors: A Review |
title_full | The Design Considerations and Challenges in MOS-Based Temperature Sensors: A Review |
title_fullStr | The Design Considerations and Challenges in MOS-Based Temperature Sensors: A Review |
title_full_unstemmed | The Design Considerations and Challenges in MOS-Based Temperature Sensors: A Review |
title_short | The Design Considerations and Challenges in MOS-Based Temperature Sensors: A Review |
title_sort | design considerations and challenges in mos based temperature sensors a review |
topic | MOS temperature sensor subthreshold MOS gate leakage power supply variations |
url | https://www.mdpi.com/2079-9292/11/7/1019 |
work_keys_str_mv | AT shuangxie thedesignconsiderationsandchallengesinmosbasedtemperaturesensorsareview AT shuangxie designconsiderationsandchallengesinmosbasedtemperaturesensorsareview |