X- ray diffraction and dielectric properties of PbSe thin films

Lead selenide PbSe thin films of different thicknesses (300, 500, and 700 nm) were deposited under vacuum using thermal evaporation method on glass substrates. X-ray diffraction measurements showed that increasing of thickness lead to well crystallize the prepared samples, such that the crystallite...

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Main Author: Bushra A. Hasan
Format: Article
Language:English
Published: University of Baghdad 2019-01-01
Series:Iraqi Journal of Physics
Subjects:
Online Access:https://ijp.uobaghdad.edu.iq/index.php/physics/article/view/115
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author Bushra A. Hasan
author_facet Bushra A. Hasan
author_sort Bushra A. Hasan
collection DOAJ
description Lead selenide PbSe thin films of different thicknesses (300, 500, and 700 nm) were deposited under vacuum using thermal evaporation method on glass substrates. X-ray diffraction measurements showed that increasing of thickness lead to well crystallize the prepared samples, such that the crystallite size increases while the dislocation density decreases with thickness increasing. A.C conductivity, dielectric constants, and loss tangent are studied as function to thickness, frequency (10kHz-10MHz) and temperatures (293K-493K). The conductivity measurements confirm confirmed that hopping is the mechanism responsible for the conduction process. Increasing of thickness decreases the thermal activation energy estimated from Arhinus equation is found to decrease with thickness increasing. The increase of thickness lead to reduce the polarizability α while the increasing of temperature lead to increase α.
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spelling doaj.art-afe6718d0d4c43f5bad88f109b66f53f2023-03-14T05:37:11ZengUniversity of BaghdadIraqi Journal of Physics2070-40032664-55482019-01-01153410.30723/ijp.v15i34.115X- ray diffraction and dielectric properties of PbSe thin filmsBushra A. Hasan Lead selenide PbSe thin films of different thicknesses (300, 500, and 700 nm) were deposited under vacuum using thermal evaporation method on glass substrates. X-ray diffraction measurements showed that increasing of thickness lead to well crystallize the prepared samples, such that the crystallite size increases while the dislocation density decreases with thickness increasing. A.C conductivity, dielectric constants, and loss tangent are studied as function to thickness, frequency (10kHz-10MHz) and temperatures (293K-493K). The conductivity measurements confirm confirmed that hopping is the mechanism responsible for the conduction process. Increasing of thickness decreases the thermal activation energy estimated from Arhinus equation is found to decrease with thickness increasing. The increase of thickness lead to reduce the polarizability α while the increasing of temperature lead to increase α. https://ijp.uobaghdad.edu.iq/index.php/physics/article/view/115PbSe, vacuum deposition, conduction studies, thin films, dielectric relaxation, complex capacitance.
spellingShingle Bushra A. Hasan
X- ray diffraction and dielectric properties of PbSe thin films
Iraqi Journal of Physics
PbSe, vacuum deposition, conduction studies, thin films, dielectric relaxation, complex capacitance.
title X- ray diffraction and dielectric properties of PbSe thin films
title_full X- ray diffraction and dielectric properties of PbSe thin films
title_fullStr X- ray diffraction and dielectric properties of PbSe thin films
title_full_unstemmed X- ray diffraction and dielectric properties of PbSe thin films
title_short X- ray diffraction and dielectric properties of PbSe thin films
title_sort x ray diffraction and dielectric properties of pbse thin films
topic PbSe, vacuum deposition, conduction studies, thin films, dielectric relaxation, complex capacitance.
url https://ijp.uobaghdad.edu.iq/index.php/physics/article/view/115
work_keys_str_mv AT bushraahasan xraydiffractionanddielectricpropertiesofpbsethinfilms