Bias stress instability in multilayered MoTe2 field effect transistors under DC and pulse‐mode operation

Abstract Here, bias stress instability on multilayered MoTe2 field effect transistors (m‐MoTe2 FETs) with encapsulation of hydrophobic polymers (cyclic transparent optical polymer) is systematically investigated under DC and pulse mode operation. During DC mode stress, the threshold voltage shift (Δ...

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Bibliographic Details
Main Authors: Seung Gi Seo, Jinheon Jeong, Seung Yeob Kim, S. Kim, Kwangtaek Kim, Kyuwon Kim, Sung Hun Jin
Format: Article
Language:English
Published: Wiley 2021-02-01
Series:Electronics Letters
Subjects:
Online Access:https://doi.org/10.1049/ell2.12019

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