The Influence of a Continuum Background on Carrier Relaxation in InAs/InGaAs Quantum Dot

The Influence of a Continuum Background on Carrier Relaxation in InAs/InGaAs Quantum Dot

<p>Abstract</p><p>We have investigated the ultra-fast carrier dynamics in Molecular Beam Epitaxy (MBE)-grown InAs/InGaAs/GaAs quantum dots (QDs) emitting at 1.3 &#956;m by time resolved photoluminescence (TRPL) upconversion measurements with a time resolution of about 200 fs. C...

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Номзүйн дэлгэрэнгүй
Үндсэн зохиолчид: Visimberga Giuseppe, Rain&#242; Gabriele, Salhi Abdelmajid, Todaro Maria, De Vittorio Massimo, Passaseo Adriana, Cingolani Roberto, De Giorgi Milena
Формат: Өгүүллэг
Хэл сонгох:English
Хэвлэсэн: SpringerOpen 2007-01-01
Цуврал:Nanoscale Research Letters
Нөхцлүүд:
Ultra fast spectroscopy
Carrier relaxation
Quantum dots
Онлайн хандалт:http://dx.doi.org/10.1007/s11671-007-9092-2

Интернэт

http://dx.doi.org/10.1007/s11671-007-9092-2

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