Direct and integrating sampling in terahertz receivers from wafer-scalable InAs nanowires
Abstract Terahertz (THz) radiation will play a pivotal role in wireless communications, sensing, spectroscopy and imaging technologies in the decades to come. THz emitters and receivers should thus be simplified in their design and miniaturized to become a commodity. In this work we demonstrate scal...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2024-01-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-023-44345-1 |
| _version_ | 1827388350321917952 |
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| author | Kun Peng Nicholas Paul Morgan Ford M. Wagner Thomas Siday Chelsea Qiushi Xia Didem Dede Victor Boureau Valerio Piazza Anna Fontcuberta i Morral Michael B. Johnston |
| author_facet | Kun Peng Nicholas Paul Morgan Ford M. Wagner Thomas Siday Chelsea Qiushi Xia Didem Dede Victor Boureau Valerio Piazza Anna Fontcuberta i Morral Michael B. Johnston |
| author_sort | Kun Peng |
| collection | DOAJ |
| description | Abstract Terahertz (THz) radiation will play a pivotal role in wireless communications, sensing, spectroscopy and imaging technologies in the decades to come. THz emitters and receivers should thus be simplified in their design and miniaturized to become a commodity. In this work we demonstrate scalable photoconductive THz receivers based on horizontally-grown InAs nanowires (NWs) embedded in a bow-tie antenna that work at room temperature. The NWs provide a short photoconductivity lifetime while conserving high electron mobility. The large surface-to-volume ratio also ensures low dark current and thus low thermal noise, compared to narrow-bandgap bulk devices. By engineering the NW morphology, the NWs exhibit greatly different photoconductivity lifetimes, enabling the receivers to detect THz photons via both direct and integrating sampling modes. The broadband NW receivers are compatible with gating lasers across the entire range of telecom wavelengths (1.2–1.6 μm) and thus are ideal for inexpensive all-optical fibre-based THz time-domain spectroscopy and imaging systems. The devices are deterministically positioned by lithography and thus scalable to the wafer scale, opening the path for a new generation of commercial THz receivers. |
| first_indexed | 2024-03-08T16:16:37Z |
| format | Article |
| id | doaj.art-b032de397e3b4addaf25f25e1f8e2ee3 |
| institution | Directory Open Access Journal |
| issn | 2041-1723 |
| language | English |
| last_indexed | 2024-03-08T16:16:37Z |
| publishDate | 2024-01-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj.art-b032de397e3b4addaf25f25e1f8e2ee32024-01-07T12:32:42ZengNature PortfolioNature Communications2041-17232024-01-011511810.1038/s41467-023-44345-1Direct and integrating sampling in terahertz receivers from wafer-scalable InAs nanowiresKun Peng0Nicholas Paul Morgan1Ford M. Wagner2Thomas Siday3Chelsea Qiushi Xia4Didem Dede5Victor Boureau6Valerio Piazza7Anna Fontcuberta i Morral8Michael B. Johnston9Department of Physics, University of Oxford, Clarendon LaboratoryLaboratory of Semiconductor Materials, Institute of Materials, EPFLDepartment of Physics, University of Oxford, Clarendon LaboratoryDepartment of Physics, University of Oxford, Clarendon LaboratoryDepartment of Physics, University of Oxford, Clarendon LaboratoryLaboratory of Semiconductor Materials, Institute of Materials, EPFLInterdisciplinary Centre for Electron Microscopy, EPFLLaboratory of Semiconductor Materials, Institute of Materials, EPFLLaboratory of Semiconductor Materials, Institute of Materials, EPFLDepartment of Physics, University of Oxford, Clarendon LaboratoryAbstract Terahertz (THz) radiation will play a pivotal role in wireless communications, sensing, spectroscopy and imaging technologies in the decades to come. THz emitters and receivers should thus be simplified in their design and miniaturized to become a commodity. In this work we demonstrate scalable photoconductive THz receivers based on horizontally-grown InAs nanowires (NWs) embedded in a bow-tie antenna that work at room temperature. The NWs provide a short photoconductivity lifetime while conserving high electron mobility. The large surface-to-volume ratio also ensures low dark current and thus low thermal noise, compared to narrow-bandgap bulk devices. By engineering the NW morphology, the NWs exhibit greatly different photoconductivity lifetimes, enabling the receivers to detect THz photons via both direct and integrating sampling modes. The broadband NW receivers are compatible with gating lasers across the entire range of telecom wavelengths (1.2–1.6 μm) and thus are ideal for inexpensive all-optical fibre-based THz time-domain spectroscopy and imaging systems. The devices are deterministically positioned by lithography and thus scalable to the wafer scale, opening the path for a new generation of commercial THz receivers.https://doi.org/10.1038/s41467-023-44345-1 |
| spellingShingle | Kun Peng Nicholas Paul Morgan Ford M. Wagner Thomas Siday Chelsea Qiushi Xia Didem Dede Victor Boureau Valerio Piazza Anna Fontcuberta i Morral Michael B. Johnston Direct and integrating sampling in terahertz receivers from wafer-scalable InAs nanowires Nature Communications |
| title | Direct and integrating sampling in terahertz receivers from wafer-scalable InAs nanowires |
| title_full | Direct and integrating sampling in terahertz receivers from wafer-scalable InAs nanowires |
| title_fullStr | Direct and integrating sampling in terahertz receivers from wafer-scalable InAs nanowires |
| title_full_unstemmed | Direct and integrating sampling in terahertz receivers from wafer-scalable InAs nanowires |
| title_short | Direct and integrating sampling in terahertz receivers from wafer-scalable InAs nanowires |
| title_sort | direct and integrating sampling in terahertz receivers from wafer scalable inas nanowires |
| url | https://doi.org/10.1038/s41467-023-44345-1 |
| work_keys_str_mv | AT kunpeng directandintegratingsamplinginterahertzreceiversfromwaferscalableinasnanowires AT nicholaspaulmorgan directandintegratingsamplinginterahertzreceiversfromwaferscalableinasnanowires AT fordmwagner directandintegratingsamplinginterahertzreceiversfromwaferscalableinasnanowires AT thomassiday directandintegratingsamplinginterahertzreceiversfromwaferscalableinasnanowires AT chelseaqiushixia directandintegratingsamplinginterahertzreceiversfromwaferscalableinasnanowires AT didemdede directandintegratingsamplinginterahertzreceiversfromwaferscalableinasnanowires AT victorboureau directandintegratingsamplinginterahertzreceiversfromwaferscalableinasnanowires AT valeriopiazza directandintegratingsamplinginterahertzreceiversfromwaferscalableinasnanowires AT annafontcubertaimorral directandintegratingsamplinginterahertzreceiversfromwaferscalableinasnanowires AT michaelbjohnston directandintegratingsamplinginterahertzreceiversfromwaferscalableinasnanowires |