Study of Nitridation Effect on Structural, Morphological, and Optical Properties of GaAs Film Growth on Silicon Substrates via Close Space Vapor Transport Technique
In this work, Gallium Arsenide (GaAs) films growth via Close Space Vapor Transport (CSVT) technique on n-type Silicon (Si) substrates (100) and its nitridation effect in the ammonia (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><...
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MDPI AG
2023-04-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/13/4/613 |
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| author | Eduardo Alejandro Valdez-Torija Antonio Coyopol Godofredo García-Salgado Román Romano-Trujillo Crisóforo Morales-Ruiz Enrique Rosendo-Andrés Marco Antonio Vásquez-Agustín Justo Miguel Gracia-Jiménez Reina Galeazzi-Isasmendi Francisco Morales-Morales |
| author_facet | Eduardo Alejandro Valdez-Torija Antonio Coyopol Godofredo García-Salgado Román Romano-Trujillo Crisóforo Morales-Ruiz Enrique Rosendo-Andrés Marco Antonio Vásquez-Agustín Justo Miguel Gracia-Jiménez Reina Galeazzi-Isasmendi Francisco Morales-Morales |
| author_sort | Eduardo Alejandro Valdez-Torija |
| collection | DOAJ |
| description | In this work, Gallium Arsenide (GaAs) films growth via Close Space Vapor Transport (CSVT) technique on n-type Silicon (Si) substrates (100) and its nitridation effect in the ammonia (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi>N</mi><msub><mi>H</mi><mn>3</mn></msub></mrow></semantics></math></inline-formula>) environment is reported. The GaAs films were grown at 800, 900, and 1000 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mrow></mrow><mo>∘</mo></msup></semantics></math></inline-formula>C, and the nitridation process was carried out at 900 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mrow></mrow><mo>∘</mo></msup></semantics></math></inline-formula>C with an <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi>N</mi><msub><mi>H</mi><mn>3</mn></msub></mrow></semantics></math></inline-formula>:<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>H</mi><mn>2</mn></msub></semantics></math></inline-formula> gasses ratio. The GaAs films with and without nitridation process were analyzed using X-ray diffraction (XRD), Raman spectroscopy, Diffuse Reflectance Spectroscopy, and Scanning Electron Microscopy with Energy Dispersive X-ray analysis (SEM-EDX). Grazing incidence X-ray diffraction measurements of GaAs films nitrided confirm a polycrystalline GaN wurtzite structure with preferential orientation along (002), and additionality, a crystallographic plane (310) of low intensity is observed in <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>2</mn><mi>θ</mi><mo>=</mo><mn>52</mn><mo>.</mo><msup><mn>18</mn><mo>∘</mo></msup></mrow></semantics></math></inline-formula> corresponding to <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi>G</mi><msub><mi>a</mi><mn>2</mn></msub><msub><mi>O</mi><mn>3</mn></msub></mrow></semantics></math></inline-formula>. The average quantification results in weight (Wt. %) of GaAs films nitrided was determined by EDS; Ga∼79, N∼17.1, O∼2 and As∼1.8 Wt. %. The presence of GaN, <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi>G</mi><msub><mi>a</mi><mi>x</mi></msub><msub><mi>O</mi><mi>y</mi></msub></mrow></semantics></math></inline-formula>, Si, and GaAs modes were found by Raman measurements, demonstrating a partial nitriding. The band gap estimation by diffuse reflectance was between 3.2 and 3.38 eV such values are close to that reported for bulk GaN (3.4 eV). The presence of oxygen in the structure could be related to substrates or the GaAs source. |
| first_indexed | 2024-03-11T05:07:16Z |
| format | Article |
| id | doaj.art-b0330d971600454f8c679738e26fa202 |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-11T05:07:16Z |
| publishDate | 2023-04-01 |
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| series | Crystals |
| spelling | doaj.art-b0330d971600454f8c679738e26fa2022023-11-17T18:51:03ZengMDPI AGCrystals2073-43522023-04-0113461310.3390/cryst13040613Study of Nitridation Effect on Structural, Morphological, and Optical Properties of GaAs Film Growth on Silicon Substrates via Close Space Vapor Transport TechniqueEduardo Alejandro Valdez-Torija0Antonio Coyopol1Godofredo García-Salgado2Román Romano-Trujillo3Crisóforo Morales-Ruiz4Enrique Rosendo-Andrés5Marco Antonio Vásquez-Agustín6Justo Miguel Gracia-Jiménez7Reina Galeazzi-Isasmendi8Francisco Morales-Morales9IC–CIDS, Benemérita Universidad Autónoma de Puebla, Ed. IC5, Col. San Manuel, Puebla 72570, MexicoIC–CIDS, Benemérita Universidad Autónoma de Puebla, Ed. IC5, Col. San Manuel, Puebla 72570, MexicoIC–CIDS, Benemérita Universidad Autónoma de Puebla, Ed. IC5, Col. San Manuel, Puebla 72570, MexicoIC–CIDS, Benemérita Universidad Autónoma de Puebla, Ed. IC5, Col. San Manuel, Puebla 72570, MexicoIC–CIDS, Benemérita Universidad Autónoma de Puebla, Ed. IC5, Col. San Manuel, Puebla 72570, MexicoIC–CIDS, Benemérita Universidad Autónoma de Puebla, Ed. IC5, Col. San Manuel, Puebla 72570, MexicoFacultad de Ciencias de la Electrónica, Benemérita Universidad Autónoma de Puebla, Ed. FCE1, Av. San Claudio y 18 Sur Col. San Manuel, Puebla 72570, MexicoInstituto de Física, Benemérita Universidad Autónoma de Puebla, Av. San Claudio y Blvd. 18 Sur, Col. San Manuel, Ciudad Universitaria, Apartado Postal J-48, Puebla 72570, MexicoIC–CIDS, Benemérita Universidad Autónoma de Puebla, Ed. IC5, Col. San Manuel, Puebla 72570, MexicoCentro de Investigaciones en Óptica A.C., Lomas del Bosque 115, Lomas del Campestre, León 37150, MexicoIn this work, Gallium Arsenide (GaAs) films growth via Close Space Vapor Transport (CSVT) technique on n-type Silicon (Si) substrates (100) and its nitridation effect in the ammonia (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi>N</mi><msub><mi>H</mi><mn>3</mn></msub></mrow></semantics></math></inline-formula>) environment is reported. The GaAs films were grown at 800, 900, and 1000 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mrow></mrow><mo>∘</mo></msup></semantics></math></inline-formula>C, and the nitridation process was carried out at 900 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mrow></mrow><mo>∘</mo></msup></semantics></math></inline-formula>C with an <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi>N</mi><msub><mi>H</mi><mn>3</mn></msub></mrow></semantics></math></inline-formula>:<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>H</mi><mn>2</mn></msub></semantics></math></inline-formula> gasses ratio. The GaAs films with and without nitridation process were analyzed using X-ray diffraction (XRD), Raman spectroscopy, Diffuse Reflectance Spectroscopy, and Scanning Electron Microscopy with Energy Dispersive X-ray analysis (SEM-EDX). Grazing incidence X-ray diffraction measurements of GaAs films nitrided confirm a polycrystalline GaN wurtzite structure with preferential orientation along (002), and additionality, a crystallographic plane (310) of low intensity is observed in <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>2</mn><mi>θ</mi><mo>=</mo><mn>52</mn><mo>.</mo><msup><mn>18</mn><mo>∘</mo></msup></mrow></semantics></math></inline-formula> corresponding to <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi>G</mi><msub><mi>a</mi><mn>2</mn></msub><msub><mi>O</mi><mn>3</mn></msub></mrow></semantics></math></inline-formula>. The average quantification results in weight (Wt. %) of GaAs films nitrided was determined by EDS; Ga∼79, N∼17.1, O∼2 and As∼1.8 Wt. %. The presence of GaN, <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi>G</mi><msub><mi>a</mi><mi>x</mi></msub><msub><mi>O</mi><mi>y</mi></msub></mrow></semantics></math></inline-formula>, Si, and GaAs modes were found by Raman measurements, demonstrating a partial nitriding. The band gap estimation by diffuse reflectance was between 3.2 and 3.38 eV such values are close to that reported for bulk GaN (3.4 eV). The presence of oxygen in the structure could be related to substrates or the GaAs source.https://www.mdpi.com/2073-4352/13/4/613GaNGaAsCSVTXRD |
| spellingShingle | Eduardo Alejandro Valdez-Torija Antonio Coyopol Godofredo García-Salgado Román Romano-Trujillo Crisóforo Morales-Ruiz Enrique Rosendo-Andrés Marco Antonio Vásquez-Agustín Justo Miguel Gracia-Jiménez Reina Galeazzi-Isasmendi Francisco Morales-Morales Study of Nitridation Effect on Structural, Morphological, and Optical Properties of GaAs Film Growth on Silicon Substrates via Close Space Vapor Transport Technique Crystals GaN GaAs CSVT XRD |
| title | Study of Nitridation Effect on Structural, Morphological, and Optical Properties of GaAs Film Growth on Silicon Substrates via Close Space Vapor Transport Technique |
| title_full | Study of Nitridation Effect on Structural, Morphological, and Optical Properties of GaAs Film Growth on Silicon Substrates via Close Space Vapor Transport Technique |
| title_fullStr | Study of Nitridation Effect on Structural, Morphological, and Optical Properties of GaAs Film Growth on Silicon Substrates via Close Space Vapor Transport Technique |
| title_full_unstemmed | Study of Nitridation Effect on Structural, Morphological, and Optical Properties of GaAs Film Growth on Silicon Substrates via Close Space Vapor Transport Technique |
| title_short | Study of Nitridation Effect on Structural, Morphological, and Optical Properties of GaAs Film Growth on Silicon Substrates via Close Space Vapor Transport Technique |
| title_sort | study of nitridation effect on structural morphological and optical properties of gaas film growth on silicon substrates via close space vapor transport technique |
| topic | GaN GaAs CSVT XRD |
| url | https://www.mdpi.com/2073-4352/13/4/613 |
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