Fabrication of In(P)As Quantum Dots by Interdiffusion of P and As on InP(311)B Substrate
Herein, we report on our investigation of a fabrication scheme for self-assembled quantum dots (QDs), which is another type of Stranski−Krastanow (S−K) growth mode. The In(P)As QD structure was formed by the irradiation of As flux on an InP(311)B surface in a molecular beam epita...
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| Format: | Article |
| Language: | English |
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MDPI AG
2020-02-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/10/2/90 |
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| author | Kouichi Akahane Atsushi Matsumoto Toshimasa Umezawa Naokatsu Yamamoto |
| author_facet | Kouichi Akahane Atsushi Matsumoto Toshimasa Umezawa Naokatsu Yamamoto |
| author_sort | Kouichi Akahane |
| collection | DOAJ |
| description | Herein, we report on our investigation of a fabrication scheme for self-assembled quantum dots (QDs), which is another type of Stranski−Krastanow (S−K) growth mode. The In(P)As QD structure was formed by the irradiation of As flux on an InP(311)B surface in a molecular beam epitaxy system controlled by substrate temperature and irradiation duration. These QDs show photoluminescence at around 1500 nm, which is suitable for fiber optic communication systems. The QDs formed by this structure had high As composition because they had size, density, and emission wavelength similar to those of QDs grown by the usual S−K growth mode. |
| first_indexed | 2024-04-13T08:48:02Z |
| format | Article |
| id | doaj.art-b0c241a4daa449f29c03c527fa5f5b3b |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-04-13T08:48:02Z |
| publishDate | 2020-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-b0c241a4daa449f29c03c527fa5f5b3b2022-12-22T02:53:35ZengMDPI AGCrystals2073-43522020-02-011029010.3390/cryst10020090cryst10020090Fabrication of In(P)As Quantum Dots by Interdiffusion of P and As on InP(311)B SubstrateKouichi Akahane0Atsushi Matsumoto1Toshimasa Umezawa2Naokatsu Yamamoto3National Institute of Information and Communications Technology (NICT) 4-2-1 Nukuikitamachi, Koganei, Tokyo 184-8795, JapanNational Institute of Information and Communications Technology (NICT) 4-2-1 Nukuikitamachi, Koganei, Tokyo 184-8795, JapanNational Institute of Information and Communications Technology (NICT) 4-2-1 Nukuikitamachi, Koganei, Tokyo 184-8795, JapanNational Institute of Information and Communications Technology (NICT) 4-2-1 Nukuikitamachi, Koganei, Tokyo 184-8795, JapanHerein, we report on our investigation of a fabrication scheme for self-assembled quantum dots (QDs), which is another type of Stranski−Krastanow (S−K) growth mode. The In(P)As QD structure was formed by the irradiation of As flux on an InP(311)B surface in a molecular beam epitaxy system controlled by substrate temperature and irradiation duration. These QDs show photoluminescence at around 1500 nm, which is suitable for fiber optic communication systems. The QDs formed by this structure had high As composition because they had size, density, and emission wavelength similar to those of QDs grown by the usual S−K growth mode.https://www.mdpi.com/2073-4352/10/2/90nanostructuresdiffusiondesorptionatomic force microscopymolecular beam epitaxysemiconducting iii-v materials |
| spellingShingle | Kouichi Akahane Atsushi Matsumoto Toshimasa Umezawa Naokatsu Yamamoto Fabrication of In(P)As Quantum Dots by Interdiffusion of P and As on InP(311)B Substrate Crystals nanostructures diffusion desorption atomic force microscopy molecular beam epitaxy semiconducting iii-v materials |
| title | Fabrication of In(P)As Quantum Dots by Interdiffusion of P and As on InP(311)B Substrate |
| title_full | Fabrication of In(P)As Quantum Dots by Interdiffusion of P and As on InP(311)B Substrate |
| title_fullStr | Fabrication of In(P)As Quantum Dots by Interdiffusion of P and As on InP(311)B Substrate |
| title_full_unstemmed | Fabrication of In(P)As Quantum Dots by Interdiffusion of P and As on InP(311)B Substrate |
| title_short | Fabrication of In(P)As Quantum Dots by Interdiffusion of P and As on InP(311)B Substrate |
| title_sort | fabrication of in p as quantum dots by interdiffusion of p and as on inp 311 b substrate |
| topic | nanostructures diffusion desorption atomic force microscopy molecular beam epitaxy semiconducting iii-v materials |
| url | https://www.mdpi.com/2073-4352/10/2/90 |
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