First-Principles Study on the Impact of Stress on Depassivation of Defects at a-SiO2/Si Interfaces
The amorphous silicon dioxide-silicon (a-SiO2/Si) interface is an important part of silicon devices. It is difficult to avoid interface defects during the device production process. The passivated interface defects will undergo a depassivation reaction with the protons in the silicon dioxide generat...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Frontiers Media S.A.
2022-05-01
|
| Series: | Frontiers in Materials |
| Subjects: | |
| Online Access: | https://www.frontiersin.org/articles/10.3389/fmats.2022.872837/full |