Current Status and Future Trends of GaN HEMTs in Electrified Transportation
Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) enable higher efficiency, higher power density, and smaller passive components resulting in lighter, smaller and more efficient electrical systems as opposed to conventional Silicon (Si) based devices. This paper investigates the detaile...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2020-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9063442/ |
| _version_ | 1819176188671688704 |
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| author | Niloufar Keshmiri Deqiang Wang Bharat Agrawal Ruoyu Hou Ali Emadi |
| author_facet | Niloufar Keshmiri Deqiang Wang Bharat Agrawal Ruoyu Hou Ali Emadi |
| author_sort | Niloufar Keshmiri |
| collection | DOAJ |
| description | Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) enable higher efficiency, higher power density, and smaller passive components resulting in lighter, smaller and more efficient electrical systems as opposed to conventional Silicon (Si) based devices. This paper investigates the detailed benefits of using GaN devices in transportation electrification applications. The material properties of GaN including the applications of GaN HEMTs at different switch ratings are presented. The challenges currently facing the transportation industry are introduced and possible solutions are presented. A detailed review of the use of GaN in the Electric Vehicle (EV) powertrain is discussed. The implementation of GaN devices in aircraft, ships, rail vehicles and heavy-duty vehicles is briefly covered. Future trends of GaN devices in terms of cost, voltage level, gate driver design, thermal management and packaging are investigated. |
| first_indexed | 2024-12-22T21:06:48Z |
| format | Article |
| id | doaj.art-b0d98dfc9d8a4ec38a4609e8330d8bb5 |
| institution | Directory Open Access Journal |
| issn | 2169-3536 |
| language | English |
| last_indexed | 2024-12-22T21:06:48Z |
| publishDate | 2020-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj.art-b0d98dfc9d8a4ec38a4609e8330d8bb52022-12-21T18:12:39ZengIEEEIEEE Access2169-35362020-01-018705537057110.1109/ACCESS.2020.29869729063442Current Status and Future Trends of GaN HEMTs in Electrified TransportationNiloufar Keshmiri0https://orcid.org/0000-0002-0567-2266Deqiang Wang1Bharat Agrawal2https://orcid.org/0000-0002-1565-044XRuoyu Hou3Ali Emadi4McMaster Institute for Automotive Research and Technology, McMaster University, Hamilton, ON, CanadaMcMaster Institute for Automotive Research and Technology, McMaster University, Hamilton, ON, CanadaMcMaster Institute for Automotive Research and Technology, McMaster University, Hamilton, ON, CanadaMcMaster Institute for Automotive Research and Technology, McMaster University, Hamilton, ON, CanadaMcMaster Institute for Automotive Research and Technology, McMaster University, Hamilton, ON, CanadaGallium Nitride High Electron Mobility Transistors (GaN HEMTs) enable higher efficiency, higher power density, and smaller passive components resulting in lighter, smaller and more efficient electrical systems as opposed to conventional Silicon (Si) based devices. This paper investigates the detailed benefits of using GaN devices in transportation electrification applications. The material properties of GaN including the applications of GaN HEMTs at different switch ratings are presented. The challenges currently facing the transportation industry are introduced and possible solutions are presented. A detailed review of the use of GaN in the Electric Vehicle (EV) powertrain is discussed. The implementation of GaN devices in aircraft, ships, rail vehicles and heavy-duty vehicles is briefly covered. Future trends of GaN devices in terms of cost, voltage level, gate driver design, thermal management and packaging are investigated.https://ieeexplore.ieee.org/document/9063442/Electric vehiclegallium nitridehigh electron mobility transistorhybrid electric vehiclewide bandgap devices |
| spellingShingle | Niloufar Keshmiri Deqiang Wang Bharat Agrawal Ruoyu Hou Ali Emadi Current Status and Future Trends of GaN HEMTs in Electrified Transportation IEEE Access Electric vehicle gallium nitride high electron mobility transistor hybrid electric vehicle wide bandgap devices |
| title | Current Status and Future Trends of GaN HEMTs in Electrified Transportation |
| title_full | Current Status and Future Trends of GaN HEMTs in Electrified Transportation |
| title_fullStr | Current Status and Future Trends of GaN HEMTs in Electrified Transportation |
| title_full_unstemmed | Current Status and Future Trends of GaN HEMTs in Electrified Transportation |
| title_short | Current Status and Future Trends of GaN HEMTs in Electrified Transportation |
| title_sort | current status and future trends of gan hemts in electrified transportation |
| topic | Electric vehicle gallium nitride high electron mobility transistor hybrid electric vehicle wide bandgap devices |
| url | https://ieeexplore.ieee.org/document/9063442/ |
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