Preparation and Characterization Study of Porous Silicon Doped with Cu and Ag
In this paper, porous silicon was prepared by using electrochemical etching technique of p-type silicon acceptor, with a resistivity of 1.5-4Ohm.cm, using hydrochloric acid with concentration of 24%. The etching current density effect 4, 12, 20mA/cm2 was carried out at constant etching time of 15min...
| Prif Awduron: | , , |
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| Fformat: | Erthygl |
| Iaith: | English |
| Cyhoeddwyd: |
Unviversity of Technology- Iraq
2017-01-01
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| Cyfres: | Engineering and Technology Journal |
| Pynciau: | |
| Mynediad Ar-lein: | https://etj.uotechnology.edu.iq/article_133668_b30e517c251771ad24df948c621ca863.pdf |