| Summary: | A Process Design Kit (PDK) has been developed to realize complex integrated circuits in Silicon Carbide (SiC) bipolar low-power technology. The PDK development process included basic device modeling, and design of gate library and parameterized cells. A transistor−transistor logic (TTL)-based PDK gate library design will also be discussed with delay, power, noise margin, and fan-out as main design criterion to tolerate the threshold voltage shift, beta (<inline-formula> <math display="inline"> <semantics> <mi>β</mi> </semantics> </math> </inline-formula>) and collector current (<inline-formula> <math display="inline"> <semantics> <msub> <mi>I</mi> <mi>C</mi> </msub> </semantics> </math> </inline-formula>) variation of SiC devices as temperature increases. The PDK-based complex digital ICs design flow based on layout, physical verification, and in-house fabrication process will also be demonstrated. Both combinational and sequential circuits have been designed, such as a 720-device ALU and a 520-device 4 bit counter. All the integrated circuits and devices are fully characterized up to 500 °C. The inverter and a D-type flip-flop (DFF) are characterized as benchmark standard cells. The proposed work is a key step towards SiC-based very large-scale integrated (VLSI) circuits implementation for high-temperature applications.
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