Room-temperature electric field-induced out-of-plane ferroelectric polarization in strain-free freestanding 2D SrTiO3 membranes
SrTiO3 (STO), a room-temperature paraelectric material in bulk form, has been a rich playground for emergent phenomena for decades. As an emerging material, great attention has been paid to freestanding 2D STO thin films. Recently, the room-temperature ferroelectricity has been unveiled in strained...
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Format: | Article |
Language: | English |
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AIP Publishing LLC
2023-04-01
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Series: | APL Materials |
Online Access: | http://dx.doi.org/10.1063/5.0144758 |
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author | Yueying Zhang Jiaming Li Ke Yang Fangyuan Zheng Yuqing Zhou Yuguo Zhang Yupeng Hui Yue-Qi Wang Jiang Zhu Jincheng Zhang Yue Hao Ming Yang Tao Li Jiong Zhao Haijiao Harsan Ma |
author_facet | Yueying Zhang Jiaming Li Ke Yang Fangyuan Zheng Yuqing Zhou Yuguo Zhang Yupeng Hui Yue-Qi Wang Jiang Zhu Jincheng Zhang Yue Hao Ming Yang Tao Li Jiong Zhao Haijiao Harsan Ma |
author_sort | Yueying Zhang |
collection | DOAJ |
description | SrTiO3 (STO), a room-temperature paraelectric material in bulk form, has been a rich playground for emergent phenomena for decades. As an emerging material, great attention has been paid to freestanding 2D STO thin films. Recently, the room-temperature ferroelectricity has been unveiled in strained STO thin films; however, it remains an open question whether the strain-free freestanding 2D STO thin film is room-temperature ferroelectric or not. Here, we report the electric field-induced out-of-plane ferroelectric polarization in large-scale, freestanding, and strain-free 2D STO membranes at room temperature. High-resolution piezoresponse force microscopy measurements show that polarization in freestanding strain-free STO membranes can be switched by electric field and persist for an hour. The first-principles calculations suggest that the intrinsic defects such as oxygen vacancies could be linked to the observed spontaneous out-of-plane polarization in 2D STO membranes, which could be further enhanced by external electric field due to the induced symmetry breaking. Our work reports the unprecedented room-temperature ferroelectric polarization in strain-free freestanding 2D STO membranes, unlocking the great potential of freestanding 2D STO for the applications in novel electronic and logic-in-memory devices. |
first_indexed | 2024-03-12T21:43:34Z |
format | Article |
id | doaj.art-b10c1b56cc8a4676b6035ddc1e847863 |
institution | Directory Open Access Journal |
issn | 2166-532X |
language | English |
last_indexed | 2024-03-12T21:43:34Z |
publishDate | 2023-04-01 |
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series | APL Materials |
spelling | doaj.art-b10c1b56cc8a4676b6035ddc1e8478632023-07-26T14:42:04ZengAIP Publishing LLCAPL Materials2166-532X2023-04-01114041103041103-810.1063/5.0144758Room-temperature electric field-induced out-of-plane ferroelectric polarization in strain-free freestanding 2D SrTiO3 membranesYueying Zhang0Jiaming Li1Ke Yang2Fangyuan Zheng3Yuqing Zhou4Yuguo Zhang5Yupeng Hui6Yue-Qi Wang7Jiang Zhu8Jincheng Zhang9Yue Hao10Ming Yang11Tao Li12Jiong Zhao13Haijiao Harsan Ma14Low Dimensional Quantum Physics & Device Group, School of Microelectronics, Xidian University, 2 South Taibai Road, Xi’an 710071, ChinaDepartment of Materials Science and Engineering, Center for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, ChinaDepartment of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, ChinaDepartment of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, ChinaDepartment of Materials Science and Engineering, Center for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, ChinaLow Dimensional Quantum Physics & Device Group, School of Microelectronics, Xidian University, 2 South Taibai Road, Xi’an 710071, ChinaLow Dimensional Quantum Physics & Device Group, School of Microelectronics, Xidian University, 2 South Taibai Road, Xi’an 710071, ChinaLow Dimensional Quantum Physics & Device Group, School of Microelectronics, Xidian University, 2 South Taibai Road, Xi’an 710071, ChinaLow Dimensional Quantum Physics & Device Group, School of Microelectronics, Xidian University, 2 South Taibai Road, Xi’an 710071, ChinaLow Dimensional Quantum Physics & Device Group, School of Microelectronics, Xidian University, 2 South Taibai Road, Xi’an 710071, ChinaLow Dimensional Quantum Physics & Device Group, School of Microelectronics, Xidian University, 2 South Taibai Road, Xi’an 710071, ChinaDepartment of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, ChinaDepartment of Materials Science and Engineering, Center for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, ChinaDepartment of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, ChinaLow Dimensional Quantum Physics & Device Group, School of Microelectronics, Xidian University, 2 South Taibai Road, Xi’an 710071, ChinaSrTiO3 (STO), a room-temperature paraelectric material in bulk form, has been a rich playground for emergent phenomena for decades. As an emerging material, great attention has been paid to freestanding 2D STO thin films. Recently, the room-temperature ferroelectricity has been unveiled in strained STO thin films; however, it remains an open question whether the strain-free freestanding 2D STO thin film is room-temperature ferroelectric or not. Here, we report the electric field-induced out-of-plane ferroelectric polarization in large-scale, freestanding, and strain-free 2D STO membranes at room temperature. High-resolution piezoresponse force microscopy measurements show that polarization in freestanding strain-free STO membranes can be switched by electric field and persist for an hour. The first-principles calculations suggest that the intrinsic defects such as oxygen vacancies could be linked to the observed spontaneous out-of-plane polarization in 2D STO membranes, which could be further enhanced by external electric field due to the induced symmetry breaking. Our work reports the unprecedented room-temperature ferroelectric polarization in strain-free freestanding 2D STO membranes, unlocking the great potential of freestanding 2D STO for the applications in novel electronic and logic-in-memory devices.http://dx.doi.org/10.1063/5.0144758 |
spellingShingle | Yueying Zhang Jiaming Li Ke Yang Fangyuan Zheng Yuqing Zhou Yuguo Zhang Yupeng Hui Yue-Qi Wang Jiang Zhu Jincheng Zhang Yue Hao Ming Yang Tao Li Jiong Zhao Haijiao Harsan Ma Room-temperature electric field-induced out-of-plane ferroelectric polarization in strain-free freestanding 2D SrTiO3 membranes APL Materials |
title | Room-temperature electric field-induced out-of-plane ferroelectric polarization in strain-free freestanding 2D SrTiO3 membranes |
title_full | Room-temperature electric field-induced out-of-plane ferroelectric polarization in strain-free freestanding 2D SrTiO3 membranes |
title_fullStr | Room-temperature electric field-induced out-of-plane ferroelectric polarization in strain-free freestanding 2D SrTiO3 membranes |
title_full_unstemmed | Room-temperature electric field-induced out-of-plane ferroelectric polarization in strain-free freestanding 2D SrTiO3 membranes |
title_short | Room-temperature electric field-induced out-of-plane ferroelectric polarization in strain-free freestanding 2D SrTiO3 membranes |
title_sort | room temperature electric field induced out of plane ferroelectric polarization in strain free freestanding 2d srtio3 membranes |
url | http://dx.doi.org/10.1063/5.0144758 |
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