Influence of argon/nitrogen sputtering gas and molybdenum/titanium seed layer on aluminium nitride ⟨100⟩ thin film growth using ceramic target
Aluminium nitride (AlN) can be sputter-deposited onto a substrate to form polycrystalline or single crystal AlN thin film layer. Highly crystalline AlN in ⟨100⟩ orientation has found its application in high-frequency acoustic wave resonators. The research work to investigate AlN ⟨100⟩ crystal growth...
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| Format: | Article |
| Language: | English |
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Elsevier
2024-03-01
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| Series: | Journal of Materials Research and Technology |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2238785424002850 |
| _version_ | 1797247893323644928 |
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| author | Muhammad Izzuddin Abd Samad Syazwani Izrah Badrudin Darven Raj Ponnuthurai Marwan Mansor Nafarizal Nayan Ahmad Shuhaimi Abu Bakar Rhonira Latif |
| author_facet | Muhammad Izzuddin Abd Samad Syazwani Izrah Badrudin Darven Raj Ponnuthurai Marwan Mansor Nafarizal Nayan Ahmad Shuhaimi Abu Bakar Rhonira Latif |
| author_sort | Muhammad Izzuddin Abd Samad |
| collection | DOAJ |
| description | Aluminium nitride (AlN) can be sputter-deposited onto a substrate to form polycrystalline or single crystal AlN thin film layer. Highly crystalline AlN in ⟨100⟩ orientation has found its application in high-frequency acoustic wave resonators. The research work to investigate AlN ⟨100⟩ crystal growth in magnetron sputtering deposition using AlN ceramic target is rarely studied. In our work, a comprehensive study on the influence of argon only/argon plus purified nitrogen/argon plus unpurified nitrogen sputtering gas, a variation of argon to purified nitrogen fraction of 1:1, 1:2 and 1:4 and affixing silicon (Si), molybdenum (Mo) or titanium (Ti) underneath/seed layer on the crystal growth of AlN ⟨100⟩ is presented. The addition of nitrogen gas, either purified or unpurified has reduced the growth rate of AlN and introduced more oxygen into the sputtering chamber, contaminating AlN with alumina crystals. Although the Al–O bond in AlN increases, the sputter-deposited AlN ⟨100⟩ crystal in purified nitrogen of equivalent ratio with argon has improved significantly compared to argon only sputtering gas. The AlN grows into amorphous state with smooth surface as the portion for purified nitrogen becomes double/quadraple compared to argon. High quality of AlN ⟨100⟩ thin film layer is achieved by inserting purified nitrogen into argon of ratio not more than 1:1.The incredibly small atomic mismatch of 1.2 % between AlN ⟨100⟩ and Mo is attained but the surface is contaminated with molybdenum oxides. The smallest AlN surface roughness with moderate lattice mismatch can be attained by employing Ti seed layer. |
| first_indexed | 2024-03-08T05:14:24Z |
| format | Article |
| id | doaj.art-b15273dcfa03442891358d8648197b63 |
| institution | Directory Open Access Journal |
| issn | 2238-7854 |
| language | English |
| last_indexed | 2024-04-24T20:05:56Z |
| publishDate | 2024-03-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Journal of Materials Research and Technology |
| spelling | doaj.art-b15273dcfa03442891358d8648197b632024-03-24T06:57:54ZengElsevierJournal of Materials Research and Technology2238-78542024-03-012922482257Influence of argon/nitrogen sputtering gas and molybdenum/titanium seed layer on aluminium nitride ⟨100⟩ thin film growth using ceramic targetMuhammad Izzuddin Abd Samad0Syazwani Izrah Badrudin1Darven Raj Ponnuthurai2Marwan Mansor3Nafarizal Nayan4Ahmad Shuhaimi Abu Bakar5Rhonira Latif6Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600, Bangi, Selangor, MalaysiaInstitute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600, Bangi, Selangor, MalaysiaInstitute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600, Bangi, Selangor, MalaysiaLow Dimensional Materials Research Centre (LDMRC), Faculty of Science, Universiti Malaya, 50603, Kuala Lumpur, MalaysiaMicroelectronic and Nanotechnology-Shamsuddin Research Centre (MiNT-SRC), Universiti Tun Hussein Onn Malaysia, 86400 Batu Pahat, Johor, MalaysiaLow Dimensional Materials Research Centre (LDMRC), Faculty of Science, Universiti Malaya, 50603, Kuala Lumpur, MalaysiaInstitute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600, Bangi, Selangor, Malaysia; Corresponding author.Aluminium nitride (AlN) can be sputter-deposited onto a substrate to form polycrystalline or single crystal AlN thin film layer. Highly crystalline AlN in ⟨100⟩ orientation has found its application in high-frequency acoustic wave resonators. The research work to investigate AlN ⟨100⟩ crystal growth in magnetron sputtering deposition using AlN ceramic target is rarely studied. In our work, a comprehensive study on the influence of argon only/argon plus purified nitrogen/argon plus unpurified nitrogen sputtering gas, a variation of argon to purified nitrogen fraction of 1:1, 1:2 and 1:4 and affixing silicon (Si), molybdenum (Mo) or titanium (Ti) underneath/seed layer on the crystal growth of AlN ⟨100⟩ is presented. The addition of nitrogen gas, either purified or unpurified has reduced the growth rate of AlN and introduced more oxygen into the sputtering chamber, contaminating AlN with alumina crystals. Although the Al–O bond in AlN increases, the sputter-deposited AlN ⟨100⟩ crystal in purified nitrogen of equivalent ratio with argon has improved significantly compared to argon only sputtering gas. The AlN grows into amorphous state with smooth surface as the portion for purified nitrogen becomes double/quadraple compared to argon. High quality of AlN ⟨100⟩ thin film layer is achieved by inserting purified nitrogen into argon of ratio not more than 1:1.The incredibly small atomic mismatch of 1.2 % between AlN ⟨100⟩ and Mo is attained but the surface is contaminated with molybdenum oxides. The smallest AlN surface roughness with moderate lattice mismatch can be attained by employing Ti seed layer.http://www.sciencedirect.com/science/article/pii/S2238785424002850Surface morphologyAlN targetCrystal growthMolecular bondinga-planec-plane |
| spellingShingle | Muhammad Izzuddin Abd Samad Syazwani Izrah Badrudin Darven Raj Ponnuthurai Marwan Mansor Nafarizal Nayan Ahmad Shuhaimi Abu Bakar Rhonira Latif Influence of argon/nitrogen sputtering gas and molybdenum/titanium seed layer on aluminium nitride ⟨100⟩ thin film growth using ceramic target Journal of Materials Research and Technology Surface morphology AlN target Crystal growth Molecular bonding a-plane c-plane |
| title | Influence of argon/nitrogen sputtering gas and molybdenum/titanium seed layer on aluminium nitride ⟨100⟩ thin film growth using ceramic target |
| title_full | Influence of argon/nitrogen sputtering gas and molybdenum/titanium seed layer on aluminium nitride ⟨100⟩ thin film growth using ceramic target |
| title_fullStr | Influence of argon/nitrogen sputtering gas and molybdenum/titanium seed layer on aluminium nitride ⟨100⟩ thin film growth using ceramic target |
| title_full_unstemmed | Influence of argon/nitrogen sputtering gas and molybdenum/titanium seed layer on aluminium nitride ⟨100⟩ thin film growth using ceramic target |
| title_short | Influence of argon/nitrogen sputtering gas and molybdenum/titanium seed layer on aluminium nitride ⟨100⟩ thin film growth using ceramic target |
| title_sort | influence of argon nitrogen sputtering gas and molybdenum titanium seed layer on aluminium nitride ⟨100⟩ thin film growth using ceramic target |
| topic | Surface morphology AlN target Crystal growth Molecular bonding a-plane c-plane |
| url | http://www.sciencedirect.com/science/article/pii/S2238785424002850 |
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