Influence of quantum well design on light polarization switching in AlGaN ultraviolet emitters
Polarization properties from AlGaN quantum well (QW) strongly determine the efficiency of deep ultraviolet (UV) light-emitting diodes (LEDs), hence knowing the critical Al-content at which the light polarization switches is essential for high-efficiency deep UV LED designs. This work theoretically i...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-08-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5048597 |
| _version_ | 1828870696605843456 |
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| author | Cheng Liu Jing Zhang |
| author_facet | Cheng Liu Jing Zhang |
| author_sort | Cheng Liu |
| collection | DOAJ |
| description | Polarization properties from AlGaN quantum well (QW) strongly determine the efficiency of deep ultraviolet (UV) light-emitting diodes (LEDs), hence knowing the critical Al-content at which the light polarization switches is essential for high-efficiency deep UV LED designs. This work theoretically investigates the influence of QW design on the light polarization switching in AlGaN-based UV LEDs. The physics analysis by using the self-consistent 6-band k·p model shows that the Al-content for valence subbands crossover presents an increasing trend as AlGaN QW thickness increases with consideration of polarization electric field, carrier screening effect and strain state. On the other hand, the critical Al-content where the transverse-electric-polarized spontaneous emission recombination rate (Rsp) is equal to the transverse-magnetic-polarized Rsp has the maximum value at the QW thickness of ∼1.5 nm. The difference between the two types of critical Al-contents can be explained by the quantum confined stark effect and the band mixing effect. The light polarization properties from reported AlGaN-based UV emitters show a similar trend to our theoretical results on critical Al-contents, indicating the importance on the understanding of QW design for high-efficiency deep-UV emitters. |
| first_indexed | 2024-12-13T06:16:13Z |
| format | Article |
| id | doaj.art-b152a35ea7d641669aa5b9a68c2b468a |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-13T06:16:13Z |
| publishDate | 2018-08-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-b152a35ea7d641669aa5b9a68c2b468a2022-12-21T23:56:58ZengAIP Publishing LLCAIP Advances2158-32262018-08-0188085125085125-810.1063/1.5048597091808ADVInfluence of quantum well design on light polarization switching in AlGaN ultraviolet emittersCheng Liu0Jing Zhang1Microsystems Engineering, Rochester Institute of Technology, Rochester, New York 14623, USAMicrosystems Engineering, Rochester Institute of Technology, Rochester, New York 14623, USAPolarization properties from AlGaN quantum well (QW) strongly determine the efficiency of deep ultraviolet (UV) light-emitting diodes (LEDs), hence knowing the critical Al-content at which the light polarization switches is essential for high-efficiency deep UV LED designs. This work theoretically investigates the influence of QW design on the light polarization switching in AlGaN-based UV LEDs. The physics analysis by using the self-consistent 6-band k·p model shows that the Al-content for valence subbands crossover presents an increasing trend as AlGaN QW thickness increases with consideration of polarization electric field, carrier screening effect and strain state. On the other hand, the critical Al-content where the transverse-electric-polarized spontaneous emission recombination rate (Rsp) is equal to the transverse-magnetic-polarized Rsp has the maximum value at the QW thickness of ∼1.5 nm. The difference between the two types of critical Al-contents can be explained by the quantum confined stark effect and the band mixing effect. The light polarization properties from reported AlGaN-based UV emitters show a similar trend to our theoretical results on critical Al-contents, indicating the importance on the understanding of QW design for high-efficiency deep-UV emitters.http://dx.doi.org/10.1063/1.5048597 |
| spellingShingle | Cheng Liu Jing Zhang Influence of quantum well design on light polarization switching in AlGaN ultraviolet emitters AIP Advances |
| title | Influence of quantum well design on light polarization switching in AlGaN ultraviolet emitters |
| title_full | Influence of quantum well design on light polarization switching in AlGaN ultraviolet emitters |
| title_fullStr | Influence of quantum well design on light polarization switching in AlGaN ultraviolet emitters |
| title_full_unstemmed | Influence of quantum well design on light polarization switching in AlGaN ultraviolet emitters |
| title_short | Influence of quantum well design on light polarization switching in AlGaN ultraviolet emitters |
| title_sort | influence of quantum well design on light polarization switching in algan ultraviolet emitters |
| url | http://dx.doi.org/10.1063/1.5048597 |
| work_keys_str_mv | AT chengliu influenceofquantumwelldesignonlightpolarizationswitchinginalganultravioletemitters AT jingzhang influenceofquantumwelldesignonlightpolarizationswitchinginalganultravioletemitters |