| Summary: | This study investigates the degradation of the silicon NPN transistor’s emitter-base junction, specifically the 2N2219A model, under both forward and reverse polarization. We examine the current–voltage characteristics under the influence of 1 MeV proton irradiation at various fluencies, which are <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>5.3</mn><mo>×</mo><msup><mrow><mn>10</mn></mrow><mrow><mn>8</mn></mrow></msup><mo>,</mo><mn>5.3</mn><msup><mrow><mo>×</mo><mn>10</mn></mrow><mrow><mn>10</mn></mrow></msup><mo>,</mo><mn>5</mn><mo>×</mo><msup><mrow><mn>10</mn></mrow><mrow><mn>11</mn></mrow></msup><mo>,</mo><mn>5</mn><mo>×</mo><msup><mrow><mn>10</mn></mrow><mrow><mn>12</mn></mrow></msup></mrow></semantics></math></inline-formula>, and <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>5</mn><msup><mrow><mo>×</mo><mn>10</mn></mrow><mrow><mn>13</mn></mrow></msup></mrow></semantics></math></inline-formula> protons/cm², all conducted at 307 K. The experimental findings elucidate a pronounced dependency of diode parameters, including the reverse saturation current, series resistance, and the non-idealist factor, on the incident proton flow. This observation underscores that proton-induced degradation is primarily driven by displacement damage, while recorded degradation is predominantly attributed to the generation of defects and interfacial traps within the transistor resulting from exposure to high-energy radiation. Our findings indicate that the effects of irradiation align more closely with the compensation phenomenon in doping rather than its reinforcement.
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