High-Energy Radiation Effects on Silicon NPN Bipolar Transistor Electrical Performance: A Study with 1 MeV Proton Irradiation

High-Energy Radiation Effects on Silicon NPN Bipolar Transistor Electrical Performance: A Study with 1 MeV Proton Irradiation

This study investigates the degradation of the silicon NPN transistor’s emitter-base junction, specifically the 2N2219A model, under both forward and reverse polarization. We examine the current–voltage characteristics under the influence of 1 MeV proton irradiation at various fluencies, which are &...

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Bibliographic Details
Main Authors:	Haddou EL Ghazi, Redouane En-nadir, Anouar Jorio, Mohamed A. Basyooni-M. Kabatas
Format:	Article
Language:	English
Published:	MDPI AG 2023-10-01
Series:	Materials
Subjects:	silicon transistors NPN-BJTs emitter-base proton irradiation electric performance
Online Access:	https://www.mdpi.com/1996-1944/16/21/6977

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