Uniform broad-area deposition and patterning of SiO2 nanofilms by 172 nm photochemical conversion of liquid tetraethoxysilane layers at 300 K
Oxide films of the quality required for the fabrication of electronic and photonic devices are typically deposited at elevated temperatures and thermal equilibrium, thereby adversely impacting thermal budgets. We report the deposition and patterning of silicon dioxide (SiO2) films of high electrical...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2024-01-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0177086 |