Buffer layers in heterostructures
This work deals with the problem of choosing buffer layer architectures in the development of standard heterostructure models with controlled levels of mechanical stresses and low defect densities in the bulk and at layer boundaries. It has been found that these parameters depend on the quality of t...
Main Author: | Vyacheslav A. Kharchenko |
---|---|
Format: | Article |
Language: | English |
Published: |
Pensoft Publishers
2017-12-01
|
Series: | Modern Electronic Materials |
Subjects: | |
Online Access: | http://www.sciencedirect.com/science/article/pii/S2452177917300890 |
Similar Items
-
Strained Silicon on Silicon by Wafer Bonding and Layer Transfer from Relaxed SiGe Buffer
by: Isaacson, David M., et al.
Published: (2004) -
The formation of single-domain gallium phosphide buffer layers on a silicon substrate without the use of migration enhanced epitaxy technique
by: Fedorov Vladimir, et al.
Published: (2024-06-01) -
Silicon-germanium strained layers and heterostructures /
by: 231428 Jain, Suresh C., et al.
Published: (2003) -
Theoretical Investigation of Origin of Quantized Conduction in 2D Layered Ruddleson–Popper Perovskite Heterostructure for the RRAM Applications
by: Umbreen Rasheed, et al.
Published: (2022-12-01) -
Technology for the Detection of Ablation Defects in Buffer Layers of High-Voltage Cables
by: Zeqi Huang, et al.
Published: (2022-01-01)