GaN epitaxial layers grown on multilayer graphene by MOCVD
In this study, GaN epitaxial layers were successfully deposited on a multilayer graphene (MLG) by using metal-organic chemical vapor deposition (MOCVD). Highly crystalline orientations of the GaN films were confirmed through electron backscatter diffraction (EBSD). An epitaxial relationship between...
Main Authors: | Tianbao Li, Chenyang Liu, Zhe Zhang, Bin Yu, Hailiang Dong, Wei Jia, Zhigang Jia, Chunyan Yu, Lin Gan, Bingshe Xu |
---|---|
Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2018-04-01
|
Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/1.5025899 |
Similar Items
-
Understanding the Growth Mechanism of GaN Epitaxial Layers on Mechanically Exfoliated Graphite
by: Tianbao Li, et al.
Published: (2018-04-01) -
Epitaxy of GaN Film by Hydrogen Plasma Assisted MOCVD
by: Sugianto Sugianto, et al.
Published: (2019-01-01) -
Characterization of AlInN layer grown on GaN/Sapphire substrate by MOCVD
by: Wei-Ching Huang,, et al.
Published: (2013) -
Surface morphology of GaN nucleation layer grown by MOCVD with different carrier gas
by: Xingliang Su, et al.
Published: (2018-07-01) -
Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N2/H2-Grown GaN Barrier
by: Xiaorun Zhou, et al.
Published: (2017-05-01)