Nano-polycrystalline Ag-doped ZnO layer for steep-slope threshold switching selectors
In this work, a nano-polycrystalline Ag-doped ZnO-based threshold switching (TS) selector via a facile co-sputtering technique is investigated without using an Ag active metal layer. The effects of the Ag concentration with respect to OFF-state leakage current (Ioff) were studied, and the results de...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2021-11-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0066311 |
| _version_ | 1818842703808430080 |
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| author | Akshay Sahota Harrison Sejoon Kim Jaidah Mohan Dan N. Le Yong Chan Jung Si Joon Kim Jang-Sik Lee Jinho Ahn Heber Hernandez-Arriaga Jiyoung Kim |
| author_facet | Akshay Sahota Harrison Sejoon Kim Jaidah Mohan Dan N. Le Yong Chan Jung Si Joon Kim Jang-Sik Lee Jinho Ahn Heber Hernandez-Arriaga Jiyoung Kim |
| author_sort | Akshay Sahota |
| collection | DOAJ |
| description | In this work, a nano-polycrystalline Ag-doped ZnO-based threshold switching (TS) selector via a facile co-sputtering technique is investigated without using an Ag active metal layer. The effects of the Ag concentration with respect to OFF-state leakage current (Ioff) were studied, and the results demonstrate that by regulating the Ag doping concentration in the switching layer (SL), an electroforming-free switching with an Ion/Ioff ratio of ∼108 could be achieved, having an extremely low Ioff value of ∼10−13 A. Furthermore, cycling endurance can also be improved as the formation of a laterally thick and stable filament does not happen promptly with consequent measurements when there is a limited amount of Ag in the SL. The selector device performance enhancement is attributed to the doping-based polycrystalline structure that facilitates enhanced control on filament formation due to the restricted availability and anisotropic diffusion of Ag ions in the polycrystalline ZnO SL, thereby trimming down the overall stochasticity during metallic filament growth. The present study demonstrates that a doping-based polycrystalline SL structure can be implemented in a selector device to augment TS characteristics, i.e., device variances and cycling endurance for adoption in ultra-high density memory applications. |
| first_indexed | 2024-12-19T04:46:12Z |
| format | Article |
| id | doaj.art-b23446ec68ee4627bd08cd91c934ad9d |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-19T04:46:12Z |
| publishDate | 2021-11-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-b23446ec68ee4627bd08cd91c934ad9d2022-12-21T20:35:29ZengAIP Publishing LLCAIP Advances2158-32262021-11-011111115213115213-610.1063/5.0066311Nano-polycrystalline Ag-doped ZnO layer for steep-slope threshold switching selectorsAkshay Sahota0Harrison Sejoon Kim1Jaidah Mohan2Dan N. Le3Yong Chan Jung4Si Joon Kim5Jang-Sik Lee6Jinho Ahn7Heber Hernandez-Arriaga8Jiyoung Kim9Department of Electrical Engineering, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080, USADepartment of Materials Science and Engineering, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080, USADepartment of Materials Science and Engineering, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080, USADepartment of Materials Science and Engineering, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080, USADepartment of Materials Science and Engineering, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080, USADepartment of Electrical and Electronics Engineering, Kangwon National University, 1 Gangwondaehakgil, Chuncheon, Gangwon-do 24341, Republic of KoreaDepartment of Material Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Pohang 790-784, Republic of KoreaDivision of Materials Science and Engineering, Hanyang University, 222 Wangshimni-ro, Seongdong-gu, Seoul 04763, Republic of KoreaDepartment of Materials Science and Engineering, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080, USADepartment of Electrical Engineering, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080, USAIn this work, a nano-polycrystalline Ag-doped ZnO-based threshold switching (TS) selector via a facile co-sputtering technique is investigated without using an Ag active metal layer. The effects of the Ag concentration with respect to OFF-state leakage current (Ioff) were studied, and the results demonstrate that by regulating the Ag doping concentration in the switching layer (SL), an electroforming-free switching with an Ion/Ioff ratio of ∼108 could be achieved, having an extremely low Ioff value of ∼10−13 A. Furthermore, cycling endurance can also be improved as the formation of a laterally thick and stable filament does not happen promptly with consequent measurements when there is a limited amount of Ag in the SL. The selector device performance enhancement is attributed to the doping-based polycrystalline structure that facilitates enhanced control on filament formation due to the restricted availability and anisotropic diffusion of Ag ions in the polycrystalline ZnO SL, thereby trimming down the overall stochasticity during metallic filament growth. The present study demonstrates that a doping-based polycrystalline SL structure can be implemented in a selector device to augment TS characteristics, i.e., device variances and cycling endurance for adoption in ultra-high density memory applications.http://dx.doi.org/10.1063/5.0066311 |
| spellingShingle | Akshay Sahota Harrison Sejoon Kim Jaidah Mohan Dan N. Le Yong Chan Jung Si Joon Kim Jang-Sik Lee Jinho Ahn Heber Hernandez-Arriaga Jiyoung Kim Nano-polycrystalline Ag-doped ZnO layer for steep-slope threshold switching selectors AIP Advances |
| title | Nano-polycrystalline Ag-doped ZnO layer for steep-slope threshold switching selectors |
| title_full | Nano-polycrystalline Ag-doped ZnO layer for steep-slope threshold switching selectors |
| title_fullStr | Nano-polycrystalline Ag-doped ZnO layer for steep-slope threshold switching selectors |
| title_full_unstemmed | Nano-polycrystalline Ag-doped ZnO layer for steep-slope threshold switching selectors |
| title_short | Nano-polycrystalline Ag-doped ZnO layer for steep-slope threshold switching selectors |
| title_sort | nano polycrystalline ag doped zno layer for steep slope threshold switching selectors |
| url | http://dx.doi.org/10.1063/5.0066311 |
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