Modeling of Conduction Mechanisms in Ultrathin Films of Al<sub>2</sub>O<sub>3</sub> Deposited by ALD

Modeling of Conduction Mechanisms in Ultrathin Films of Al<sub>2</sub>O<sub>3</sub> Deposited by ALD

We reported the analysis and modeling of some conduction mechanisms in ultrathin aluminum oxide (Al<sub>2</sub>O<sub>3</sub>) films of 6 nm thickness, which are deposited by atomic layer deposition (ALD). This modeling included current-voltage measurements to metal-insulator-...

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Bibliographic Details
Main Authors:	Silvestre Salas-Rodríguez, Joel Molina-Reyes, Jaime Martínez-Castillo, Rosa M. Woo-Garcia, Agustín L. Herrera-May, Francisco López-Huerta
Format:	Article
Language:	English
Published:	MDPI AG 2023-02-01
Series:	Electronics
Subjects:	ALD aluminum oxide conduction mechanisms current model defects leakage current
Online Access:	https://www.mdpi.com/2079-9292/12/4/903

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