Control of the metal-to-insulator transition by substrate orientation in nickelates
We proved that the critical thickness for metal-to-insulator transition (MIT) of LaNiO3 could be controlled by substrate orientation. By means of density functional theory calculations, films grown on SrTiO3 substrates with (001), (110) and (111) orientations have different amount of charge transfer...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2019-10-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5125942 |
| _version_ | 1818153691369177088 |
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| author | J. J. Peng B. Ouyang H. Y. Liu C. S. Hao S. S. Tang Y. D. Gu Y. Yan |
| author_facet | J. J. Peng B. Ouyang H. Y. Liu C. S. Hao S. S. Tang Y. D. Gu Y. Yan |
| author_sort | J. J. Peng |
| collection | DOAJ |
| description | We proved that the critical thickness for metal-to-insulator transition (MIT) of LaNiO3 could be controlled by substrate orientation. By means of density functional theory calculations, films grown on SrTiO3 substrates with (001), (110) and (111) orientations have different amount of charge transfer across the interface. Different charge transfer induces different interfacial conductivity behavior and at the same time modifies the carrier density of adjacent LaNiO3 films. The manipulation of MIT by substrate orientation can be achieved through interfacial charge transfer induced interfacial conductive layer with the modified conductivity of LNO layer. |
| first_indexed | 2024-12-11T14:14:38Z |
| format | Article |
| id | doaj.art-b2e59a4802274a028c3b549b7c5ff569 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-11T14:14:38Z |
| publishDate | 2019-10-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-b2e59a4802274a028c3b549b7c5ff5692022-12-22T01:03:13ZengAIP Publishing LLCAIP Advances2158-32262019-10-01910105118105118-610.1063/1.5125942081910ADVControl of the metal-to-insulator transition by substrate orientation in nickelatesJ. J. Peng0B. Ouyang1H. Y. Liu2C. S. Hao3S. S. Tang4Y. D. Gu5Y. Yan6Beijing Institute of Aeronautical Materials, Beijing 100095, P. R. ChinaDepartment of Materials Science and Engineering, University of California Berkeley, Berkeley, California 94720, United States of AmericaBeijing Institute of Aeronautical Materials, Beijing 100095, P. R. ChinaBeijing Institute of Aeronautical Materials, Beijing 100095, P. R. ChinaSchool of Physical and Mathematical Sciences, Nanyang Technological University, 637371, SingaporeShenyang National Laboratory for Materials Science, Institute of Metal Research, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Shenyang 110016, P. R. ChinaBeijing Institute of Aeronautical Materials, Beijing 100095, P. R. ChinaWe proved that the critical thickness for metal-to-insulator transition (MIT) of LaNiO3 could be controlled by substrate orientation. By means of density functional theory calculations, films grown on SrTiO3 substrates with (001), (110) and (111) orientations have different amount of charge transfer across the interface. Different charge transfer induces different interfacial conductivity behavior and at the same time modifies the carrier density of adjacent LaNiO3 films. The manipulation of MIT by substrate orientation can be achieved through interfacial charge transfer induced interfacial conductive layer with the modified conductivity of LNO layer.http://dx.doi.org/10.1063/1.5125942 |
| spellingShingle | J. J. Peng B. Ouyang H. Y. Liu C. S. Hao S. S. Tang Y. D. Gu Y. Yan Control of the metal-to-insulator transition by substrate orientation in nickelates AIP Advances |
| title | Control of the metal-to-insulator transition by substrate orientation in nickelates |
| title_full | Control of the metal-to-insulator transition by substrate orientation in nickelates |
| title_fullStr | Control of the metal-to-insulator transition by substrate orientation in nickelates |
| title_full_unstemmed | Control of the metal-to-insulator transition by substrate orientation in nickelates |
| title_short | Control of the metal-to-insulator transition by substrate orientation in nickelates |
| title_sort | control of the metal to insulator transition by substrate orientation in nickelates |
| url | http://dx.doi.org/10.1063/1.5125942 |
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