Room-temperature, printed, low-voltage, flexible organic field-effect transistors using soluble polyimide gate dielectrics
In this work, a room-temperature, printed, low-voltage, flexible organic field-effect transistor (OFET) has been successfully developed by utilizing 4,4′-(hexafluoroisopropylidene)diphthalic anhydride-3,5-diaminobenzyl cinnamate (6FDA-DABC) and diketopyrrolopyrrole-dithienylthieno[3,2-b]thiophene (D...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-01-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.5135977 |
| _version_ | 1819011400295514112 |
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| author | Hyunjin Park Sungmi Yoo Jong Chan Won Yun Ho Kim |
| author_facet | Hyunjin Park Sungmi Yoo Jong Chan Won Yun Ho Kim |
| author_sort | Hyunjin Park |
| collection | DOAJ |
| description | In this work, a room-temperature, printed, low-voltage, flexible organic field-effect transistor (OFET) has been successfully developed by utilizing 4,4′-(hexafluoroisopropylidene)diphthalic anhydride-3,5-diaminobenzyl cinnamate (6FDA-DABC) and diketopyrrolopyrrole-dithienylthieno[3,2-b]thiophene (DPP-DTT) as polymer insulator and semiconductor layers, respectively. Dielectric properties are systematically evaluated to investigate the room-temperature processability of 6FDA-DABC. In addition, the introduction of insulating polymer, polystyrene (PS), blends considerably improves the electrical characteristics of DPP-DTT-based OFETs. The operation voltage is successfully lowered to −5 V by reducing the gate dielectric thickness. OFETs based on DPP-DTT:PS annealed under various temperature conditions demonstrate the fully room-temperature processability. Finally, OFETs integrated with ultrathin flexible substrates exhibit excellent mechanical flexibility while maintaining device performance. This work provides a great freedom in the choice of plastic substrates for the development of flexible electronic applications. |
| first_indexed | 2024-12-21T01:27:33Z |
| format | Article |
| id | doaj.art-b305451139cb47f3abc9bf2c64b93561 |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-12-21T01:27:33Z |
| publishDate | 2020-01-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-b305451139cb47f3abc9bf2c64b935612022-12-21T19:20:28ZengAIP Publishing LLCAPL Materials2166-532X2020-01-0181011112011112-610.1063/1.5135977Room-temperature, printed, low-voltage, flexible organic field-effect transistors using soluble polyimide gate dielectricsHyunjin Park0Sungmi Yoo1Jong Chan Won2Yun Ho Kim3Advanced Materials Division, Korea Research Institute of Chemical Technology (KRICT), Daejeon 34114, South KoreaAdvanced Materials Division, Korea Research Institute of Chemical Technology (KRICT), Daejeon 34114, South KoreaAdvanced Materials Division, Korea Research Institute of Chemical Technology (KRICT), Daejeon 34114, South KoreaAdvanced Materials Division, Korea Research Institute of Chemical Technology (KRICT), Daejeon 34114, South KoreaIn this work, a room-temperature, printed, low-voltage, flexible organic field-effect transistor (OFET) has been successfully developed by utilizing 4,4′-(hexafluoroisopropylidene)diphthalic anhydride-3,5-diaminobenzyl cinnamate (6FDA-DABC) and diketopyrrolopyrrole-dithienylthieno[3,2-b]thiophene (DPP-DTT) as polymer insulator and semiconductor layers, respectively. Dielectric properties are systematically evaluated to investigate the room-temperature processability of 6FDA-DABC. In addition, the introduction of insulating polymer, polystyrene (PS), blends considerably improves the electrical characteristics of DPP-DTT-based OFETs. The operation voltage is successfully lowered to −5 V by reducing the gate dielectric thickness. OFETs based on DPP-DTT:PS annealed under various temperature conditions demonstrate the fully room-temperature processability. Finally, OFETs integrated with ultrathin flexible substrates exhibit excellent mechanical flexibility while maintaining device performance. This work provides a great freedom in the choice of plastic substrates for the development of flexible electronic applications.http://dx.doi.org/10.1063/1.5135977 |
| spellingShingle | Hyunjin Park Sungmi Yoo Jong Chan Won Yun Ho Kim Room-temperature, printed, low-voltage, flexible organic field-effect transistors using soluble polyimide gate dielectrics APL Materials |
| title | Room-temperature, printed, low-voltage, flexible organic field-effect transistors using soluble polyimide gate dielectrics |
| title_full | Room-temperature, printed, low-voltage, flexible organic field-effect transistors using soluble polyimide gate dielectrics |
| title_fullStr | Room-temperature, printed, low-voltage, flexible organic field-effect transistors using soluble polyimide gate dielectrics |
| title_full_unstemmed | Room-temperature, printed, low-voltage, flexible organic field-effect transistors using soluble polyimide gate dielectrics |
| title_short | Room-temperature, printed, low-voltage, flexible organic field-effect transistors using soluble polyimide gate dielectrics |
| title_sort | room temperature printed low voltage flexible organic field effect transistors using soluble polyimide gate dielectrics |
| url | http://dx.doi.org/10.1063/1.5135977 |
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