Carrier Transport Properties of MoS2 Asymmetric Gas Sensor Under Charge Transfer-Based Barrier Modulation
Abstract Over the past few years, two-dimensional materials have gained immense attention for next-generation electric sensing devices because of their unique properties. Here, we report the carrier transport properties of MoS2 Schottky diodes under ambient as well as gas exposure conditions. MoS2 f...
Main Authors: | Sun Jun Kim, Jae Young Park, SangHyuk Yoo, Palanivel Umadevi, Hyunpyo Lee, Jinsoo Cho, Keonwook Kang, Seong Chan Jun |
---|---|
Format: | Article |
Language: | English |
Published: |
SpringerOpen
2018-09-01
|
Series: | Nanoscale Research Letters |
Subjects: | |
Online Access: | http://link.springer.com/article/10.1186/s11671-018-2652-9 |
Similar Items
-
(INVITED) Opto-electronic properties of solution-synthesized MoS2 metal-semiconductor-metal photodetector
by: Omar A. Abbas, et al.
Published: (2022-01-01) -
Modeling and characterization of Schottky diode on AIGaAs/GaAs HEMT structure /
by: 263418 Siti Suhaila Mohd. Yusof, et al.
Published: (2008) -
Simulation of forward current-voltage characteristics for Schottky diodes with MOS trenches
by: J. A. Solovjov
Published: (2021-10-01) -
Asymmetric Schottky Barrier-Generated MoS<sub>2</sub>/WTe<sub>2</sub> FET Biosensor Based on a Rectified Signal
by: Xinhao Zhang, et al.
Published: (2024-01-01) -
A Fast Recovery SiC TED MOS MOSFET with Schottky Barrier Diode (SBD)
by: Hongyu Cheng, et al.
Published: (2023-04-01)