Composition‐Dependent Ferroelectricity of LuFeO3 Orthoferrite Thin Films
Abstract This work characterizes the structural, magnetic, and ferroelectric properties of epitaxial LuFeO3 orthoferrite thin films with different Lu/Fe ratios. LuFeO3 thin films are grown by pulsed laser deposition on SrTiO3 substrates with Lu/Fe ratio ranging from 0.6 to 1.5. LuFeO3 is antiferroma...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2023-07-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202300059 |
| _version_ | 1797672167766228992 |
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| author | Eunsoo Cho Konstantin Klyukin Tingyu Su Allison Kaczmarek Caroline A. Ross |
| author_facet | Eunsoo Cho Konstantin Klyukin Tingyu Su Allison Kaczmarek Caroline A. Ross |
| author_sort | Eunsoo Cho |
| collection | DOAJ |
| description | Abstract This work characterizes the structural, magnetic, and ferroelectric properties of epitaxial LuFeO3 orthoferrite thin films with different Lu/Fe ratios. LuFeO3 thin films are grown by pulsed laser deposition on SrTiO3 substrates with Lu/Fe ratio ranging from 0.6 to 1.5. LuFeO3 is antiferromagnetic with a weak canted moment perpendicular to the film plane. Piezoresponse force microscopy imaging and switching spectroscopy reveal room temperature ferroelectricity in Lu‐rich and Fe‐rich films, whereas the stoichiometric film shows little polarization. Ferroelectricity in Lu‐rich films is present for a range of deposition conditions and crystallographic orientations. Positive‐up‐negative‐down ferroelectric measurements on a Lu‐rich film yield ≈13 µC cm−2 of switchable polarization, although the film also shows electrical leakage. The ferroelectric response is attributed to antisite defects analogous to that of Y‐rich YFeO3, yielding multiferroicity via defect engineering in a rare earth orthoferrite. |
| first_indexed | 2024-03-11T21:26:11Z |
| format | Article |
| id | doaj.art-b39437e905444881a0657902d54a11e8 |
| institution | Directory Open Access Journal |
| issn | 2199-160X |
| language | English |
| last_indexed | 2024-03-11T21:26:11Z |
| publishDate | 2023-07-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj.art-b39437e905444881a0657902d54a11e82023-09-28T04:42:52ZengWiley-VCHAdvanced Electronic Materials2199-160X2023-07-0197n/an/a10.1002/aelm.202300059Composition‐Dependent Ferroelectricity of LuFeO3 Orthoferrite Thin FilmsEunsoo Cho0Konstantin Klyukin1Tingyu Su2Allison Kaczmarek3Caroline A. Ross4Department of Materials Science and Engineering Massachusetts Institute of Technology Cambridge MA 02139 USADepartment of Materials Science and Engineering Massachusetts Institute of Technology Cambridge MA 02139 USADepartment of Mechanical Engineering Massachusetts Institute of Technology Cambridge MA 02139 USADepartment of Materials Science and Engineering Massachusetts Institute of Technology Cambridge MA 02139 USADepartment of Materials Science and Engineering Massachusetts Institute of Technology Cambridge MA 02139 USAAbstract This work characterizes the structural, magnetic, and ferroelectric properties of epitaxial LuFeO3 orthoferrite thin films with different Lu/Fe ratios. LuFeO3 thin films are grown by pulsed laser deposition on SrTiO3 substrates with Lu/Fe ratio ranging from 0.6 to 1.5. LuFeO3 is antiferromagnetic with a weak canted moment perpendicular to the film plane. Piezoresponse force microscopy imaging and switching spectroscopy reveal room temperature ferroelectricity in Lu‐rich and Fe‐rich films, whereas the stoichiometric film shows little polarization. Ferroelectricity in Lu‐rich films is present for a range of deposition conditions and crystallographic orientations. Positive‐up‐negative‐down ferroelectric measurements on a Lu‐rich film yield ≈13 µC cm−2 of switchable polarization, although the film also shows electrical leakage. The ferroelectric response is attributed to antisite defects analogous to that of Y‐rich YFeO3, yielding multiferroicity via defect engineering in a rare earth orthoferrite.https://doi.org/10.1002/aelm.202300059complex oxidesdefect engineeringmultiferroic thin filmsoff‐stoichiometryorthoferrites |
| spellingShingle | Eunsoo Cho Konstantin Klyukin Tingyu Su Allison Kaczmarek Caroline A. Ross Composition‐Dependent Ferroelectricity of LuFeO3 Orthoferrite Thin Films Advanced Electronic Materials complex oxides defect engineering multiferroic thin films off‐stoichiometry orthoferrites |
| title | Composition‐Dependent Ferroelectricity of LuFeO3 Orthoferrite Thin Films |
| title_full | Composition‐Dependent Ferroelectricity of LuFeO3 Orthoferrite Thin Films |
| title_fullStr | Composition‐Dependent Ferroelectricity of LuFeO3 Orthoferrite Thin Films |
| title_full_unstemmed | Composition‐Dependent Ferroelectricity of LuFeO3 Orthoferrite Thin Films |
| title_short | Composition‐Dependent Ferroelectricity of LuFeO3 Orthoferrite Thin Films |
| title_sort | composition dependent ferroelectricity of lufeo3 orthoferrite thin films |
| topic | complex oxides defect engineering multiferroic thin films off‐stoichiometry orthoferrites |
| url | https://doi.org/10.1002/aelm.202300059 |
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