Simulation of an AlGaInAs/InP Electro-Absorption Modulator Monolithically Integrated with Sidewall Grating Distributed Feedback Laser by Quantum Well Intermixing
A novel AlGaInAs/InP electro-absorption modulated laser (EML) with a simple fabrication process is proposed, in which the electro-absorption modulator (EAM) has a 10 nm blueshift induced by quantum well intermixing (QWI) and is monolithically integrated with a sidewall grating distributed-feedback (...
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MDPI AG
2022-08-01
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| Series: | Photonics |
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| Online Access: | https://www.mdpi.com/2304-6732/9/8/564 |
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| author | Xiao Sun Weiqing Cheng Yiming Sun Shengwei Ye Ali Al-Moathin Yongguang Huang Ruikang Zhang Song Liang Bocang Qiu Jichuan Xiong Xuefeng Liu John H. Marsh Lianping Hou |
| author_facet | Xiao Sun Weiqing Cheng Yiming Sun Shengwei Ye Ali Al-Moathin Yongguang Huang Ruikang Zhang Song Liang Bocang Qiu Jichuan Xiong Xuefeng Liu John H. Marsh Lianping Hou |
| author_sort | Xiao Sun |
| collection | DOAJ |
| description | A novel AlGaInAs/InP electro-absorption modulated laser (EML) with a simple fabrication process is proposed, in which the electro-absorption modulator (EAM) has a 10 nm blueshift induced by quantum well intermixing (QWI) and is monolithically integrated with a sidewall grating distributed-feedback (DFB) laser working at 1.55 μm wavelength. The extent of the QWI process is characterized by a diffusion length. The quantum confined Stark effect (QCSE) is simulated in terms of extinction ratio (ER) and chirp for bias electric fields from 0 kV/cm to 200 kV/cm and for different amounts of intermixing. The results indicate that for a 150 µm-long EAM with a 10 nm blueshift induced by QWI, an ER of 40 dB is obtained at 2.5 V reverse bias with no penalty in chirp compared to an as-grown quantum well (QW) and the insertion loss at 0 V bias is 0.11 dB for 1.55 µm operation wavelength. The simulated –3 dB bandwidth of the electrical to optical power response is 22 GHz. |
| first_indexed | 2024-03-09T03:57:49Z |
| format | Article |
| id | doaj.art-b3fc96751e3b4c8494bcbd4d070e6683 |
| institution | Directory Open Access Journal |
| issn | 2304-6732 |
| language | English |
| last_indexed | 2024-03-09T03:57:49Z |
| publishDate | 2022-08-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Photonics |
| spelling | doaj.art-b3fc96751e3b4c8494bcbd4d070e66832023-12-03T14:18:49ZengMDPI AGPhotonics2304-67322022-08-019856410.3390/photonics9080564Simulation of an AlGaInAs/InP Electro-Absorption Modulator Monolithically Integrated with Sidewall Grating Distributed Feedback Laser by Quantum Well IntermixingXiao Sun0Weiqing Cheng1Yiming Sun2Shengwei Ye3Ali Al-Moathin4Yongguang Huang5Ruikang Zhang6Song Liang7Bocang Qiu8Jichuan Xiong9Xuefeng Liu10John H. Marsh11Lianping Hou12James Watt School of Engineering, University of Glasgow, Glasgow G12 8QQ, UKJames Watt School of Engineering, University of Glasgow, Glasgow G12 8QQ, UKJames Watt School of Engineering, University of Glasgow, Glasgow G12 8QQ, UKJames Watt School of Engineering, University of Glasgow, Glasgow G12 8QQ, UKJames Watt School of Engineering, University of Glasgow, Glasgow G12 8QQ, UKInstitute of Semiconductors, Chinese Academy of Sciences, No. A35, East Qinghua Road, Haidian District, Beijing 100083, ChinaInstitute of Semiconductors, Chinese Academy of Sciences, No. A35, East Qinghua Road, Haidian District, Beijing 100083, ChinaInstitute of Semiconductors, Chinese Academy of Sciences, No. A35, East Qinghua Road, Haidian District, Beijing 100083, ChinaInstitute of Atomic and Molecular Science, Shaanxi University of Science and Technology, Xi’an 712081, ChinaSchool of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing 210094, ChinaSchool of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing 210094, ChinaJames Watt School of Engineering, University of Glasgow, Glasgow G12 8QQ, UKJames Watt School of Engineering, University of Glasgow, Glasgow G12 8QQ, UKA novel AlGaInAs/InP electro-absorption modulated laser (EML) with a simple fabrication process is proposed, in which the electro-absorption modulator (EAM) has a 10 nm blueshift induced by quantum well intermixing (QWI) and is monolithically integrated with a sidewall grating distributed-feedback (DFB) laser working at 1.55 μm wavelength. The extent of the QWI process is characterized by a diffusion length. The quantum confined Stark effect (QCSE) is simulated in terms of extinction ratio (ER) and chirp for bias electric fields from 0 kV/cm to 200 kV/cm and for different amounts of intermixing. The results indicate that for a 150 µm-long EAM with a 10 nm blueshift induced by QWI, an ER of 40 dB is obtained at 2.5 V reverse bias with no penalty in chirp compared to an as-grown quantum well (QW) and the insertion loss at 0 V bias is 0.11 dB for 1.55 µm operation wavelength. The simulated –3 dB bandwidth of the electrical to optical power response is 22 GHz.https://www.mdpi.com/2304-6732/9/8/564AlGaInAsmulti-quantum well (MQW)sidewall gratingquantum well intermixing (QWI) |
| spellingShingle | Xiao Sun Weiqing Cheng Yiming Sun Shengwei Ye Ali Al-Moathin Yongguang Huang Ruikang Zhang Song Liang Bocang Qiu Jichuan Xiong Xuefeng Liu John H. Marsh Lianping Hou Simulation of an AlGaInAs/InP Electro-Absorption Modulator Monolithically Integrated with Sidewall Grating Distributed Feedback Laser by Quantum Well Intermixing Photonics AlGaInAs multi-quantum well (MQW) sidewall grating quantum well intermixing (QWI) |
| title | Simulation of an AlGaInAs/InP Electro-Absorption Modulator Monolithically Integrated with Sidewall Grating Distributed Feedback Laser by Quantum Well Intermixing |
| title_full | Simulation of an AlGaInAs/InP Electro-Absorption Modulator Monolithically Integrated with Sidewall Grating Distributed Feedback Laser by Quantum Well Intermixing |
| title_fullStr | Simulation of an AlGaInAs/InP Electro-Absorption Modulator Monolithically Integrated with Sidewall Grating Distributed Feedback Laser by Quantum Well Intermixing |
| title_full_unstemmed | Simulation of an AlGaInAs/InP Electro-Absorption Modulator Monolithically Integrated with Sidewall Grating Distributed Feedback Laser by Quantum Well Intermixing |
| title_short | Simulation of an AlGaInAs/InP Electro-Absorption Modulator Monolithically Integrated with Sidewall Grating Distributed Feedback Laser by Quantum Well Intermixing |
| title_sort | simulation of an algainas inp electro absorption modulator monolithically integrated with sidewall grating distributed feedback laser by quantum well intermixing |
| topic | AlGaInAs multi-quantum well (MQW) sidewall grating quantum well intermixing (QWI) |
| url | https://www.mdpi.com/2304-6732/9/8/564 |
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