Nonvolatile memory characteristics associated with oxygen ion exchange in thin-film transistors with indium-zinc oxide channel and HfO2-x gate oxide
Non-charge-storage-based nonvolatile memory characteristics associated with oxygen ion exchange are demonstrated in a thin-film transistor (TFT) composed of an indium-zinc oxide (IZO) channel and an oxygen-deficient HfO2–x gate oxide. A nonvolatile increase in drain current and a reduced threshold v...
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| Format: | Article |
| Language: | English |
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Elsevier
2022-08-01
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| Series: | Materials Today Advances |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2590049822000601 |
| _version_ | 1818234800322904064 |
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| author | Jimin Han Boyoung Jeong Yuri Kim Joonki Suh Hongsik Jeong Hyun-Mi Kim Tae-Sik Yoon |
| author_facet | Jimin Han Boyoung Jeong Yuri Kim Joonki Suh Hongsik Jeong Hyun-Mi Kim Tae-Sik Yoon |
| author_sort | Jimin Han |
| collection | DOAJ |
| description | Non-charge-storage-based nonvolatile memory characteristics associated with oxygen ion exchange are demonstrated in a thin-film transistor (TFT) composed of an indium-zinc oxide (IZO) channel and an oxygen-deficient HfO2–x gate oxide. A nonvolatile increase in drain current and a reduced threshold voltage are obtained upon application of positive gate voltage, with the opposite characteristics upon application of negative voltage. The device shows nonvolatile retention properties and suitable endurance properties after repeated operations. Modulation of channel conductance occurs as a results of oxygen ion exchange between the HfO2–x gate oxide and the IZO channel, which consequently alters the oxygen vacancy concentration in the IZO channel; these vacancies act as n-type dopants. For comparison, a device with a thin SiO2 layer inserted between the HfO2–x gate oxide and the IZO channel to prevent oxygen ion exchange shows only the increased threshold voltage upon application of a positive gate voltage as a result of electron charging. These results verify the conductance modulation mechanism associated with oxygen ion exchange at the interface of the HfO2–x gate oxide and the IZO channel. In addition, the nonvolatile memory characteristics of the device are indicative of its potential for non-charge-storage-based nonvolatile memory application. |
| first_indexed | 2024-12-12T11:43:50Z |
| format | Article |
| id | doaj.art-b428833c053047a69f8377b3b9129ddd |
| institution | Directory Open Access Journal |
| issn | 2590-0498 |
| language | English |
| last_indexed | 2024-12-12T11:43:50Z |
| publishDate | 2022-08-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Materials Today Advances |
| spelling | doaj.art-b428833c053047a69f8377b3b9129ddd2022-12-22T00:25:29ZengElsevierMaterials Today Advances2590-04982022-08-0115100264Nonvolatile memory characteristics associated with oxygen ion exchange in thin-film transistors with indium-zinc oxide channel and HfO2-x gate oxideJimin Han0Boyoung Jeong1Yuri Kim2Joonki Suh3Hongsik Jeong4Hyun-Mi Kim5Tae-Sik Yoon6Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, Republic of KoreaGraduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, Republic of KoreaGraduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, Republic of KoreaDepartment of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, Republic of Korea; Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, Republic of KoreaDepartment of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, Republic of Korea; Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, Republic of KoreaKorea Electronics Technology Institute, Gyeonggi-do, 13509, Republic of KoreaDepartment of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, Republic of Korea; Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, Republic of Korea; Corresponding author. Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, Republic of Korea.Non-charge-storage-based nonvolatile memory characteristics associated with oxygen ion exchange are demonstrated in a thin-film transistor (TFT) composed of an indium-zinc oxide (IZO) channel and an oxygen-deficient HfO2–x gate oxide. A nonvolatile increase in drain current and a reduced threshold voltage are obtained upon application of positive gate voltage, with the opposite characteristics upon application of negative voltage. The device shows nonvolatile retention properties and suitable endurance properties after repeated operations. Modulation of channel conductance occurs as a results of oxygen ion exchange between the HfO2–x gate oxide and the IZO channel, which consequently alters the oxygen vacancy concentration in the IZO channel; these vacancies act as n-type dopants. For comparison, a device with a thin SiO2 layer inserted between the HfO2–x gate oxide and the IZO channel to prevent oxygen ion exchange shows only the increased threshold voltage upon application of a positive gate voltage as a result of electron charging. These results verify the conductance modulation mechanism associated with oxygen ion exchange at the interface of the HfO2–x gate oxide and the IZO channel. In addition, the nonvolatile memory characteristics of the device are indicative of its potential for non-charge-storage-based nonvolatile memory application.http://www.sciencedirect.com/science/article/pii/S2590049822000601Nonvolatile memoryOxygen ion exchangeThin-film transistorIndium-zinc oxideHafnium oxide |
| spellingShingle | Jimin Han Boyoung Jeong Yuri Kim Joonki Suh Hongsik Jeong Hyun-Mi Kim Tae-Sik Yoon Nonvolatile memory characteristics associated with oxygen ion exchange in thin-film transistors with indium-zinc oxide channel and HfO2-x gate oxide Materials Today Advances Nonvolatile memory Oxygen ion exchange Thin-film transistor Indium-zinc oxide Hafnium oxide |
| title | Nonvolatile memory characteristics associated with oxygen ion exchange in thin-film transistors with indium-zinc oxide channel and HfO2-x gate oxide |
| title_full | Nonvolatile memory characteristics associated with oxygen ion exchange in thin-film transistors with indium-zinc oxide channel and HfO2-x gate oxide |
| title_fullStr | Nonvolatile memory characteristics associated with oxygen ion exchange in thin-film transistors with indium-zinc oxide channel and HfO2-x gate oxide |
| title_full_unstemmed | Nonvolatile memory characteristics associated with oxygen ion exchange in thin-film transistors with indium-zinc oxide channel and HfO2-x gate oxide |
| title_short | Nonvolatile memory characteristics associated with oxygen ion exchange in thin-film transistors with indium-zinc oxide channel and HfO2-x gate oxide |
| title_sort | nonvolatile memory characteristics associated with oxygen ion exchange in thin film transistors with indium zinc oxide channel and hfo2 x gate oxide |
| topic | Nonvolatile memory Oxygen ion exchange Thin-film transistor Indium-zinc oxide Hafnium oxide |
| url | http://www.sciencedirect.com/science/article/pii/S2590049822000601 |
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