Nonvolatile memory characteristics associated with oxygen ion exchange in thin-film transistors with indium-zinc oxide channel and HfO2-x gate oxide

Nonvolatile memory characteristics associated with oxygen ion exchange in thin-film transistors with indium-zinc oxide channel and HfO2-x gate oxide

Non-charge-storage-based nonvolatile memory characteristics associated with oxygen ion exchange are demonstrated in a thin-film transistor (TFT) composed of an indium-zinc oxide (IZO) channel and an oxygen-deficient HfO2–x gate oxide. A nonvolatile increase in drain current and a reduced threshold v...

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Bibliographic Details
Main Authors:	Jimin Han, Boyoung Jeong, Yuri Kim, Joonki Suh, Hongsik Jeong, Hyun-Mi Kim, Tae-Sik Yoon
Format:	Article
Language:	English
Published:	Elsevier 2022-08-01
Series:	Materials Today Advances
Subjects:	Nonvolatile memory Oxygen ion exchange Thin-film transistor Indium-zinc oxide Hafnium oxide
Online Access:	http://www.sciencedirect.com/science/article/pii/S2590049822000601

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