Rapid thermal treatment modes of the Рt-Si system for formation of platinum silicide

Assessment is performed of the permissible nonuniformity of irradiation and temperature scatter as per the wafer area during the rapid thermal treatment, not causing the thermal stresses in it, resultant in the plastic melting or silicon disruption. It was shown, that formation of platinum silicide...

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Main Authors: V. A. Solodukha, V. A. Pilipenko, V. A. Gorushko
Format: Article
Language:Russian
Published: Educational institution «Belarusian State University of Informatics and Radioelectronics» 2019-06-01
Series:Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
Subjects:
Online Access:https://doklady.bsuir.by/jour/article/view/1137
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author V. A. Solodukha
V. A. Pilipenko
V. A. Gorushko
author_facet V. A. Solodukha
V. A. Pilipenko
V. A. Gorushko
author_sort V. A. Solodukha
collection DOAJ
description Assessment is performed of the permissible nonuniformity of irradiation and temperature scatter as per the wafer area during the rapid thermal treatment, not causing the thermal stresses in it, resultant in the plastic melting or silicon disruption. It was shown, that formation of platinum silicide at Т≤ 810 °С does not cause the negative phenomena in silicon, and it should be performed in the nitrogen environment, whose flooding into the the sealed chamber is done after creation in it of vacuum of 10 –2 mm, mercury column.
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spelling doaj.art-b434c8bce7c447e4a99cd5f47cdd95972023-03-13T07:33:19ZrusEducational institution «Belarusian State University of Informatics and Radioelectronics»Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki1729-76482019-06-010888921136Rapid thermal treatment modes of the Рt-Si system for formation of platinum silicideV. A. Solodukha0V. A. Pilipenko1V. A. Gorushko2JSC «INTEGRAL» – holding managing company «INTEGRAL»JSC «INTEGRAL» – holding managing company «INTEGRAL»JSC «INTEGRAL» – holding managing company «INTEGRAL»Assessment is performed of the permissible nonuniformity of irradiation and temperature scatter as per the wafer area during the rapid thermal treatment, not causing the thermal stresses in it, resultant in the plastic melting or silicon disruption. It was shown, that formation of platinum silicide at Т≤ 810 °С does not cause the negative phenomena in silicon, and it should be performed in the nitrogen environment, whose flooding into the the sealed chamber is done after creation in it of vacuum of 10 –2 mm, mercury column.https://doklady.bsuir.by/jour/article/view/1137intergrated circuitrapid thermal treatmentplatinum silicidethermal stresses
spellingShingle V. A. Solodukha
V. A. Pilipenko
V. A. Gorushko
Rapid thermal treatment modes of the Рt-Si system for formation of platinum silicide
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
intergrated circuit
rapid thermal treatment
platinum silicide
thermal stresses
title Rapid thermal treatment modes of the Рt-Si system for formation of platinum silicide
title_full Rapid thermal treatment modes of the Рt-Si system for formation of platinum silicide
title_fullStr Rapid thermal treatment modes of the Рt-Si system for formation of platinum silicide
title_full_unstemmed Rapid thermal treatment modes of the Рt-Si system for formation of platinum silicide
title_short Rapid thermal treatment modes of the Рt-Si system for formation of platinum silicide
title_sort rapid thermal treatment modes of the рt si system for formation of platinum silicide
topic intergrated circuit
rapid thermal treatment
platinum silicide
thermal stresses
url https://doklady.bsuir.by/jour/article/view/1137
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AT vapilipenko rapidthermaltreatmentmodesofthertsisystemforformationofplatinumsilicide
AT vagorushko rapidthermaltreatmentmodesofthertsisystemforformationofplatinumsilicide