Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter Tail in Advanced SPAD Devices
A new method to reliably simulate the PDE and jitter tail for realistic three-dimensional SPAD devices is presented. The simulation method is based on the use of electric field lines to mimic the carriers’ trajectories, and on one-dimensional models for avalanche breakdown probability and...
| Main Authors: | , , , , , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2022-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9759481/ |
| _version_ | 1828150167831838720 |
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| author | Remi Helleboid Denis Rideau Jeremy Grebot Isobel Nicholson Norbert Moussy Olivier Saxod Marie Basset Antonin Zimmer Bastien Mamdy Dominique Golanski Megan Agnew Sara Pellegrini Mathieu Sicre Christel Buj Guillaume Marchand Jerome Saint-Martin Marco Pala Philippe Dollfus |
| author_facet | Remi Helleboid Denis Rideau Jeremy Grebot Isobel Nicholson Norbert Moussy Olivier Saxod Marie Basset Antonin Zimmer Bastien Mamdy Dominique Golanski Megan Agnew Sara Pellegrini Mathieu Sicre Christel Buj Guillaume Marchand Jerome Saint-Martin Marco Pala Philippe Dollfus |
| author_sort | Remi Helleboid |
| collection | DOAJ |
| description | A new method to reliably simulate the PDE and jitter tail for realistic three-dimensional SPAD devices is presented. The simulation method is based on the use of electric field lines to mimic the carriers’ trajectories, and on one-dimensional models for avalanche breakdown probability and charges transport. This approach allows treating a three-dimensional problem as several one-dimensional problems along each field line. The original approach is applied to the McIntyre model for avalanche breakdown probability to calculate PDE, but also for jitter prediction using a dedicated advection-diffusion model. The results obtained numerically are compared with an extensive series of measurements and show a good agreement on a wide variety of device designs. |
| first_indexed | 2024-04-11T21:40:36Z |
| format | Article |
| id | doaj.art-b436d7bd8c1a4d1487a548ca5f9ce9cc |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-04-11T21:40:36Z |
| publishDate | 2022-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-b436d7bd8c1a4d1487a548ca5f9ce9cc2022-12-22T04:01:37ZengIEEEIEEE Journal of the Electron Devices Society2168-67342022-01-011058459210.1109/JEDS.2022.31683659759481Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter Tail in Advanced SPAD DevicesRemi Helleboid0https://orcid.org/0000-0001-9871-1385Denis Rideau1Jeremy Grebot2Isobel Nicholson3Norbert Moussy4https://orcid.org/0000-0001-9366-724XOlivier Saxod5Marie Basset6https://orcid.org/0000-0003-0495-0954Antonin Zimmer7https://orcid.org/0000-0002-1238-1109Bastien Mamdy8https://orcid.org/0000-0003-1381-5447Dominique Golanski9Megan Agnew10Sara Pellegrini11https://orcid.org/0000-0002-1803-7528Mathieu Sicre12Christel Buj13Guillaume Marchand14Jerome Saint-Martin15Marco Pala16https://orcid.org/0000-0001-5733-515XPhilippe Dollfus17TDP-TOS, STMicroelectronics, Crolles, FranceTDP-TOS, STMicroelectronics, Crolles, FranceTDP-TOS, STMicroelectronics, Crolles, FranceIMG Division, STMicroelectronics, Edinburgh, U.K.CEA LETI, Grenoble, FranceCEA LETI, Grenoble, FranceTDP-TOS, STMicroelectronics, Crolles, FranceTDP-TOS, STMicroelectronics, Crolles, FranceTDP-TOS, STMicroelectronics, Crolles, FranceTDP-TOS, STMicroelectronics, Crolles, FranceIMG Division, STMicroelectronics, Edinburgh, U.K.IMG Division, STMicroelectronics, Edinburgh, U.K.TDP-TOS, STMicroelectronics, Crolles, FranceTDP-TOS, STMicroelectronics, Crolles, FranceTDP-TOS, STMicroelectronics, Crolles, FranceUniversité Paris–Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, Palaiseau, FranceUniversité Paris–Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, Palaiseau, FranceUniversité Paris–Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, Palaiseau, FranceA new method to reliably simulate the PDE and jitter tail for realistic three-dimensional SPAD devices is presented. The simulation method is based on the use of electric field lines to mimic the carriers’ trajectories, and on one-dimensional models for avalanche breakdown probability and charges transport. This approach allows treating a three-dimensional problem as several one-dimensional problems along each field line. The original approach is applied to the McIntyre model for avalanche breakdown probability to calculate PDE, but also for jitter prediction using a dedicated advection-diffusion model. The results obtained numerically are compared with an extensive series of measurements and show a good agreement on a wide variety of device designs.https://ieeexplore.ieee.org/document/9759481/Avalanche breakdown probabilitybreakdown voltagejitterphoton detection efficiency (PDE)single-photon avalanche diode (SPAD)technology computer-aided design (TCAD) |
| spellingShingle | Remi Helleboid Denis Rideau Jeremy Grebot Isobel Nicholson Norbert Moussy Olivier Saxod Marie Basset Antonin Zimmer Bastien Mamdy Dominique Golanski Megan Agnew Sara Pellegrini Mathieu Sicre Christel Buj Guillaume Marchand Jerome Saint-Martin Marco Pala Philippe Dollfus Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter Tail in Advanced SPAD Devices IEEE Journal of the Electron Devices Society Avalanche breakdown probability breakdown voltage jitter photon detection efficiency (PDE) single-photon avalanche diode (SPAD) technology computer-aided design (TCAD) |
| title | Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter Tail in Advanced SPAD Devices |
| title_full | Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter Tail in Advanced SPAD Devices |
| title_fullStr | Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter Tail in Advanced SPAD Devices |
| title_full_unstemmed | Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter Tail in Advanced SPAD Devices |
| title_short | Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter Tail in Advanced SPAD Devices |
| title_sort | comprehensive modeling and characterization of photon detection efficiency and jitter tail in advanced spad devices |
| topic | Avalanche breakdown probability breakdown voltage jitter photon detection efficiency (PDE) single-photon avalanche diode (SPAD) technology computer-aided design (TCAD) |
| url | https://ieeexplore.ieee.org/document/9759481/ |
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