A 1200 V SiC Trench MOSFET with a Laterally Widened P-Shield Region to Enhance the Short-Circuit Ruggedness
In this paper, a novel 1200 V SiC trench MOSFET with a laterally widened P-shield region (LW-MOSFET) is presented by using the two-dimensional numerical simulation. Compared with the conventional trench MOSFET (CT-MOSFET), the LW-MOSFET demonstrates an effective enhancement on the short-circuit (SC)...
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| Format: | Article |
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MDPI AG
2022-03-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/11/7/1077 |
| _version_ | 1797439768801312768 |
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| author | Xinxin Zuo Jiang Lu Xinyu Liu Yun Bai Xiaoli Tian Guodong Cheng Yidan Tang Chengyue Yang Hong Chen |
| author_facet | Xinxin Zuo Jiang Lu Xinyu Liu Yun Bai Xiaoli Tian Guodong Cheng Yidan Tang Chengyue Yang Hong Chen |
| author_sort | Xinxin Zuo |
| collection | DOAJ |
| description | In this paper, a novel 1200 V SiC trench MOSFET with a laterally widened P-shield region (LW-MOSFET) is presented by using the two-dimensional numerical simulation. Compared with the conventional trench MOSFET (CT-MOSFET), the LW-MOSFET demonstrates an effective enhancement on the short-circuit (SC) reliability and the optimization of static performance simultaneously. According to the simulation results, the SC withstand time (SCWT) of the LW-MOSFET at 600 V DC bus voltage can reach 8 μs, while that of the CT-MOSFET is only 3 μs at the same conditions. The main reason is that the laterally widened P-shield region can help to suppress the saturation current and mitigate the huge current accumulation near the trench area, leading to an enhancement of the SC reliability. Moreover, the Baliga’s FOM of the proposed structure is improved by 45.7%, which benefits from the higher breakdown voltage (BV) and the lower specific on-state resistance (R<sub>on, sp</sub>) by using the optimized structure. The advantage of static performance is related to the local charge balance behavior provided by the laterally widened P-shield region, which helps to use a higher doped current spread layer (CSL) without bringing a degeneration of BV. |
| first_indexed | 2024-03-09T11:57:52Z |
| format | Article |
| id | doaj.art-b460c764a3ee436a994cd9ec039adcaf |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-03-09T11:57:52Z |
| publishDate | 2022-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-b460c764a3ee436a994cd9ec039adcaf2023-11-30T23:07:03ZengMDPI AGElectronics2079-92922022-03-01117107710.3390/electronics11071077A 1200 V SiC Trench MOSFET with a Laterally Widened P-Shield Region to Enhance the Short-Circuit RuggednessXinxin Zuo0Jiang Lu1Xinyu Liu2Yun Bai3Xiaoli Tian4Guodong Cheng5Yidan Tang6Chengyue Yang7Hong Chen8Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, ChinaInstitute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, ChinaInstitute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, ChinaInstitute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, ChinaInstitute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, ChinaInstitute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, ChinaInstitute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, ChinaInstitute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, ChinaInstitute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, ChinaIn this paper, a novel 1200 V SiC trench MOSFET with a laterally widened P-shield region (LW-MOSFET) is presented by using the two-dimensional numerical simulation. Compared with the conventional trench MOSFET (CT-MOSFET), the LW-MOSFET demonstrates an effective enhancement on the short-circuit (SC) reliability and the optimization of static performance simultaneously. According to the simulation results, the SC withstand time (SCWT) of the LW-MOSFET at 600 V DC bus voltage can reach 8 μs, while that of the CT-MOSFET is only 3 μs at the same conditions. The main reason is that the laterally widened P-shield region can help to suppress the saturation current and mitigate the huge current accumulation near the trench area, leading to an enhancement of the SC reliability. Moreover, the Baliga’s FOM of the proposed structure is improved by 45.7%, which benefits from the higher breakdown voltage (BV) and the lower specific on-state resistance (R<sub>on, sp</sub>) by using the optimized structure. The advantage of static performance is related to the local charge balance behavior provided by the laterally widened P-shield region, which helps to use a higher doped current spread layer (CSL) without bringing a degeneration of BV.https://www.mdpi.com/2079-9292/11/7/1077silicon carbide (SiC)short-circuit (SC)trench MOSFETP-shield region |
| spellingShingle | Xinxin Zuo Jiang Lu Xinyu Liu Yun Bai Xiaoli Tian Guodong Cheng Yidan Tang Chengyue Yang Hong Chen A 1200 V SiC Trench MOSFET with a Laterally Widened P-Shield Region to Enhance the Short-Circuit Ruggedness Electronics silicon carbide (SiC) short-circuit (SC) trench MOSFET P-shield region |
| title | A 1200 V SiC Trench MOSFET with a Laterally Widened P-Shield Region to Enhance the Short-Circuit Ruggedness |
| title_full | A 1200 V SiC Trench MOSFET with a Laterally Widened P-Shield Region to Enhance the Short-Circuit Ruggedness |
| title_fullStr | A 1200 V SiC Trench MOSFET with a Laterally Widened P-Shield Region to Enhance the Short-Circuit Ruggedness |
| title_full_unstemmed | A 1200 V SiC Trench MOSFET with a Laterally Widened P-Shield Region to Enhance the Short-Circuit Ruggedness |
| title_short | A 1200 V SiC Trench MOSFET with a Laterally Widened P-Shield Region to Enhance the Short-Circuit Ruggedness |
| title_sort | 1200 v sic trench mosfet with a laterally widened p shield region to enhance the short circuit ruggedness |
| topic | silicon carbide (SiC) short-circuit (SC) trench MOSFET P-shield region |
| url | https://www.mdpi.com/2079-9292/11/7/1077 |
| work_keys_str_mv | AT xinxinzuo a1200vsictrenchmosfetwithalaterallywidenedpshieldregiontoenhancetheshortcircuitruggedness AT jianglu a1200vsictrenchmosfetwithalaterallywidenedpshieldregiontoenhancetheshortcircuitruggedness AT xinyuliu a1200vsictrenchmosfetwithalaterallywidenedpshieldregiontoenhancetheshortcircuitruggedness AT yunbai a1200vsictrenchmosfetwithalaterallywidenedpshieldregiontoenhancetheshortcircuitruggedness AT xiaolitian a1200vsictrenchmosfetwithalaterallywidenedpshieldregiontoenhancetheshortcircuitruggedness AT guodongcheng a1200vsictrenchmosfetwithalaterallywidenedpshieldregiontoenhancetheshortcircuitruggedness AT yidantang a1200vsictrenchmosfetwithalaterallywidenedpshieldregiontoenhancetheshortcircuitruggedness AT chengyueyang a1200vsictrenchmosfetwithalaterallywidenedpshieldregiontoenhancetheshortcircuitruggedness AT hongchen a1200vsictrenchmosfetwithalaterallywidenedpshieldregiontoenhancetheshortcircuitruggedness AT xinxinzuo 1200vsictrenchmosfetwithalaterallywidenedpshieldregiontoenhancetheshortcircuitruggedness AT jianglu 1200vsictrenchmosfetwithalaterallywidenedpshieldregiontoenhancetheshortcircuitruggedness AT xinyuliu 1200vsictrenchmosfetwithalaterallywidenedpshieldregiontoenhancetheshortcircuitruggedness AT yunbai 1200vsictrenchmosfetwithalaterallywidenedpshieldregiontoenhancetheshortcircuitruggedness AT xiaolitian 1200vsictrenchmosfetwithalaterallywidenedpshieldregiontoenhancetheshortcircuitruggedness AT guodongcheng 1200vsictrenchmosfetwithalaterallywidenedpshieldregiontoenhancetheshortcircuitruggedness AT yidantang 1200vsictrenchmosfetwithalaterallywidenedpshieldregiontoenhancetheshortcircuitruggedness AT chengyueyang 1200vsictrenchmosfetwithalaterallywidenedpshieldregiontoenhancetheshortcircuitruggedness AT hongchen 1200vsictrenchmosfetwithalaterallywidenedpshieldregiontoenhancetheshortcircuitruggedness |