A 1200 V SiC Trench MOSFET with a Laterally Widened P-Shield Region to Enhance the Short-Circuit Ruggedness

A 1200 V SiC Trench MOSFET with a Laterally Widened P-Shield Region to Enhance the Short-Circuit Ruggedness

In this paper, a novel 1200 V SiC trench MOSFET with a laterally widened P-shield region (LW-MOSFET) is presented by using the two-dimensional numerical simulation. Compared with the conventional trench MOSFET (CT-MOSFET), the LW-MOSFET demonstrates an effective enhancement on the short-circuit (SC)...

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Bibliographic Details
Main Authors: Xinxin Zuo, Jiang Lu, Xinyu Liu, Yun Bai, Xiaoli Tian, Guodong Cheng, Yidan Tang, Chengyue Yang, Hong Chen
Format: Article
Language:English
Published: MDPI AG 2022-03-01
Series:Electronics
Subjects:
silicon carbide (SiC)
short-circuit (SC)
trench MOSFET
P-shield region
Online Access:https://www.mdpi.com/2079-9292/11/7/1077

Internet

https://www.mdpi.com/2079-9292/11/7/1077

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