Inverse design of compact nonvolatile reconfigurable silicon photonic devices with phase-change materials
In the development of silicon photonics, the continued downsizing of photonic integrated circuits will further increase the integration density, which augments the functionality of photonic chips. Compared with the traditional design method, inverse design presents a novel approach for achieving com...
| প্রধান লেখক: | , , , , , , , , , , , |
|---|---|
| বিন্যাস: | প্রবন্ধ |
| ভাষা: | English |
| প্রকাশিত: |
De Gruyter
2024-01-01
|
| মালা: | Nanophotonics |
| বিষয়গুলি: | |
| অনলাইন ব্যবহার করুন: | https://doi.org/10.1515/nanoph-2023-0637 |
| _version_ | 1826963918331838464 |
|---|---|
| author | Wei Maoliang Lin Xiaobin Xu Kai Wu Yingchun Wang Chi Wang Zijia Lei Kunhao Bao Kangjian Li Junying Li Lan Li Erping Lin Hongtao |
| author_facet | Wei Maoliang Lin Xiaobin Xu Kai Wu Yingchun Wang Chi Wang Zijia Lei Kunhao Bao Kangjian Li Junying Li Lan Li Erping Lin Hongtao |
| author_sort | Wei Maoliang |
| collection | DOAJ |
| description | In the development of silicon photonics, the continued downsizing of photonic integrated circuits will further increase the integration density, which augments the functionality of photonic chips. Compared with the traditional design method, inverse design presents a novel approach for achieving compact photonic devices. However, achieving compact, reconfigurable photonic devices with the inverse design that employs the traditional modulation method exemplified by the thermo-optic effect poses a significant challenge due to the weak modulation capability. Low-loss phase change materials (PCMs) exemplified by Sb2Se3 are a promising candidate for solving this problem benefiting from their high refractive index contrast. In this work, we first developed a robust inverse design method to realize reconfigurable silicon and phase-change materials hybrid photonic devices including mode converter and optical switch. The mode converter exhibits a broadband operation of >100 nm. The optical switch shows an extinction ratio of >25 dB and a multilevel switching of 41 (>5 bits) by simply changing the crystallinity of Sb2Se3. Here, we experimentally demonstrated a Sb2Se3/Si hybrid integrated optical switch for the first time, wherein routing can be switched by the phase transition of the whole Sb2Se3. Our work provides an effective solution for the design of photonic devices that is insensitive to fabrication errors, thereby paving the way for high integration density in future photonic chips. |
| first_indexed | 2025-02-18T02:48:49Z |
| format | Article |
| id | doaj.art-b4a79c5ea2294e51a9bb1256fb301eef |
| institution | Directory Open Access Journal |
| issn | 2192-8614 |
| language | English |
| last_indexed | 2025-02-18T02:48:49Z |
| publishDate | 2024-01-01 |
| publisher | De Gruyter |
| record_format | Article |
| series | Nanophotonics |
| spelling | doaj.art-b4a79c5ea2294e51a9bb1256fb301eef2024-11-25T11:19:11ZengDe GruyterNanophotonics2192-86142024-01-0113122183219210.1515/nanoph-2023-0637Inverse design of compact nonvolatile reconfigurable silicon photonic devices with phase-change materialsWei Maoliang0Lin Xiaobin1Xu Kai2Wu Yingchun3Wang Chi4Wang Zijia5Lei Kunhao6Bao Kangjian7Li Junying8Li Lan9Li Erping10Lin Hongtao11The State Key Lab of Brain-Machine Intelligence, Key Laboratory of Micro-Nano Electronics and Smart System of Zhejiang Province, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou310027, ChinaThe State Key Lab of Brain-Machine Intelligence, Key Laboratory of Micro-Nano Electronics and Smart System of Zhejiang Province, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou310027, ChinaThe State Key Lab of Brain-Machine Intelligence, Key Laboratory of Micro-Nano Electronics and Smart System of Zhejiang Province, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou310027, ChinaKey Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, Zhejiang310030, ChinaThe State Key Lab of Brain-Machine Intelligence, Key Laboratory of Micro-Nano Electronics and Smart System of Zhejiang Province, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou310027, ChinaThe State Key Lab of Brain-Machine Intelligence, Key Laboratory of Micro-Nano Electronics and Smart System of Zhejiang Province, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou310027, ChinaThe State Key Lab of Brain-Machine Intelligence, Key Laboratory of Micro-Nano Electronics and Smart System of Zhejiang Province, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou310027, ChinaKey Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, Zhejiang310030, ChinaHangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou310024, ChinaKey Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, Zhejiang310030, ChinaThe State Key Lab of Brain-Machine Intelligence, Key Laboratory of Micro-Nano Electronics and Smart System of Zhejiang Province, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou310027, ChinaThe State Key Lab of Brain-Machine Intelligence, Key Laboratory of Micro-Nano Electronics and Smart System of Zhejiang Province, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou310027, ChinaIn the development of silicon photonics, the continued downsizing of photonic integrated circuits will further increase the integration density, which augments the functionality of photonic chips. Compared with the traditional design method, inverse design presents a novel approach for achieving compact photonic devices. However, achieving compact, reconfigurable photonic devices with the inverse design that employs the traditional modulation method exemplified by the thermo-optic effect poses a significant challenge due to the weak modulation capability. Low-loss phase change materials (PCMs) exemplified by Sb2Se3 are a promising candidate for solving this problem benefiting from their high refractive index contrast. In this work, we first developed a robust inverse design method to realize reconfigurable silicon and phase-change materials hybrid photonic devices including mode converter and optical switch. The mode converter exhibits a broadband operation of >100 nm. The optical switch shows an extinction ratio of >25 dB and a multilevel switching of 41 (>5 bits) by simply changing the crystallinity of Sb2Se3. Here, we experimentally demonstrated a Sb2Se3/Si hybrid integrated optical switch for the first time, wherein routing can be switched by the phase transition of the whole Sb2Se3. Our work provides an effective solution for the design of photonic devices that is insensitive to fabrication errors, thereby paving the way for high integration density in future photonic chips.https://doi.org/10.1515/nanoph-2023-0637adjoint methodrobust inverse designphase change materialsilicon photonics |
| spellingShingle | Wei Maoliang Lin Xiaobin Xu Kai Wu Yingchun Wang Chi Wang Zijia Lei Kunhao Bao Kangjian Li Junying Li Lan Li Erping Lin Hongtao Inverse design of compact nonvolatile reconfigurable silicon photonic devices with phase-change materials Nanophotonics adjoint method robust inverse design phase change material silicon photonics |
| title | Inverse design of compact nonvolatile reconfigurable silicon photonic devices with phase-change materials |
| title_full | Inverse design of compact nonvolatile reconfigurable silicon photonic devices with phase-change materials |
| title_fullStr | Inverse design of compact nonvolatile reconfigurable silicon photonic devices with phase-change materials |
| title_full_unstemmed | Inverse design of compact nonvolatile reconfigurable silicon photonic devices with phase-change materials |
| title_short | Inverse design of compact nonvolatile reconfigurable silicon photonic devices with phase-change materials |
| title_sort | inverse design of compact nonvolatile reconfigurable silicon photonic devices with phase change materials |
| topic | adjoint method robust inverse design phase change material silicon photonics |
| url | https://doi.org/10.1515/nanoph-2023-0637 |
| work_keys_str_mv | AT weimaoliang inversedesignofcompactnonvolatilereconfigurablesiliconphotonicdeviceswithphasechangematerials AT linxiaobin inversedesignofcompactnonvolatilereconfigurablesiliconphotonicdeviceswithphasechangematerials AT xukai inversedesignofcompactnonvolatilereconfigurablesiliconphotonicdeviceswithphasechangematerials AT wuyingchun inversedesignofcompactnonvolatilereconfigurablesiliconphotonicdeviceswithphasechangematerials AT wangchi inversedesignofcompactnonvolatilereconfigurablesiliconphotonicdeviceswithphasechangematerials AT wangzijia inversedesignofcompactnonvolatilereconfigurablesiliconphotonicdeviceswithphasechangematerials AT leikunhao inversedesignofcompactnonvolatilereconfigurablesiliconphotonicdeviceswithphasechangematerials AT baokangjian inversedesignofcompactnonvolatilereconfigurablesiliconphotonicdeviceswithphasechangematerials AT lijunying inversedesignofcompactnonvolatilereconfigurablesiliconphotonicdeviceswithphasechangematerials AT lilan inversedesignofcompactnonvolatilereconfigurablesiliconphotonicdeviceswithphasechangematerials AT lierping inversedesignofcompactnonvolatilereconfigurablesiliconphotonicdeviceswithphasechangematerials AT linhongtao inversedesignofcompactnonvolatilereconfigurablesiliconphotonicdeviceswithphasechangematerials |