Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC
We report on the electrical properties of Al2O3 films grown on 4H-SiC by successive thermal oxidation of thin Al layers at low temperatures (200°C - 300°C). MOS capacitors made using these films contain lower density of interface traps, are more immune to electron injection and exhibit higher breakd...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-02-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5021411 |