Analytical Drain Current Model for a-SiGe:H Thin Film Transistors Considering Density of States
Thin film transistors (TFTs) fabricated on flexible and large area substrates have been studied with great interest due to their future applications. Recent studies have developed new semiconductors such as a-SiGe:H for fabrication of high performance TFTs. These films have important advantages, inc...
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| Format: | Article |
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MDPI AG
2020-06-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/9/6/1016 |
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| author | Silvestre Salas-Rodríguez Francisco López-Huerta Agustín L. Herrera-May Joel Molina-Reyes Jaime Martínez-Castillo |
| author_facet | Silvestre Salas-Rodríguez Francisco López-Huerta Agustín L. Herrera-May Joel Molina-Reyes Jaime Martínez-Castillo |
| author_sort | Silvestre Salas-Rodríguez |
| collection | DOAJ |
| description | Thin film transistors (TFTs) fabricated on flexible and large area substrates have been studied with great interest due to their future applications. Recent studies have developed new semiconductors such as a-SiGe:H for fabrication of high performance TFTs. These films have important advantages, including deposition at low temperatures and low pressures, and higher carrier mobilities. Due to these advantages, the a-SiGe:H films can be used in the fabrication of TFTs. In this work, we present an analytical drain current model for a-SiGe:H TFTs considering density of states and free charges, which describes the current behavior at sub-and above- threshold region. In addition, 2D numerical simulations of a-SiGe:H TFTs are developed. The results of the analytical drain current model agree well with those of the 2D numerical simulations. For all characteristics of the drain current curves, the average absolute error of the analytical model is close to 5.3%. This analytical drain current model can be useful to estimate the performance of a-SiGe:H TFTs for applications in large area electronics. |
| first_indexed | 2024-03-10T19:03:28Z |
| format | Article |
| id | doaj.art-b4c37a0f5d1b4a17bd8adb97f87afa52 |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-03-10T19:03:28Z |
| publishDate | 2020-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-b4c37a0f5d1b4a17bd8adb97f87afa522023-11-20T04:16:21ZengMDPI AGElectronics2079-92922020-06-0196101610.3390/electronics9061016Analytical Drain Current Model for a-SiGe:H Thin Film Transistors Considering Density of StatesSilvestre Salas-Rodríguez0Francisco López-Huerta1Agustín L. Herrera-May2Joel Molina-Reyes3Jaime Martínez-Castillo4Research Center in Micro and Nanotechnology, Universidad Veracruzana, Calzada Ruiz Cortines 455, Boca del Río, Ver 94294, MexicoFaculty of Electrical and Electronic Engineering, Universidad Veracruzana, Calzada Ruiz Cortines 455, Boca del Río, Ver 94294, MexicoResearch Center in Micro and Nanotechnology, Universidad Veracruzana, Calzada Ruiz Cortines 455, Boca del Río, Ver 94294, MexicoElectronic Department, National Institute of Astrophysics, Optics and Electronics (INAOE), Luis Enrique Erro 1, Santa María Tonanzintla, Puebla 72840, MexicoResearch Center in Micro and Nanotechnology, Universidad Veracruzana, Calzada Ruiz Cortines 455, Boca del Río, Ver 94294, MexicoThin film transistors (TFTs) fabricated on flexible and large area substrates have been studied with great interest due to their future applications. Recent studies have developed new semiconductors such as a-SiGe:H for fabrication of high performance TFTs. These films have important advantages, including deposition at low temperatures and low pressures, and higher carrier mobilities. Due to these advantages, the a-SiGe:H films can be used in the fabrication of TFTs. In this work, we present an analytical drain current model for a-SiGe:H TFTs considering density of states and free charges, which describes the current behavior at sub-and above- threshold region. In addition, 2D numerical simulations of a-SiGe:H TFTs are developed. The results of the analytical drain current model agree well with those of the 2D numerical simulations. For all characteristics of the drain current curves, the average absolute error of the analytical model is close to 5.3%. This analytical drain current model can be useful to estimate the performance of a-SiGe:H TFTs for applications in large area electronics.https://www.mdpi.com/2079-9292/9/6/1016a-SiGe:Hdensity of statescurrent modelthin film transistorsimulations |
| spellingShingle | Silvestre Salas-Rodríguez Francisco López-Huerta Agustín L. Herrera-May Joel Molina-Reyes Jaime Martínez-Castillo Analytical Drain Current Model for a-SiGe:H Thin Film Transistors Considering Density of States Electronics a-SiGe:H density of states current model thin film transistor simulations |
| title | Analytical Drain Current Model for a-SiGe:H Thin Film Transistors Considering Density of States |
| title_full | Analytical Drain Current Model for a-SiGe:H Thin Film Transistors Considering Density of States |
| title_fullStr | Analytical Drain Current Model for a-SiGe:H Thin Film Transistors Considering Density of States |
| title_full_unstemmed | Analytical Drain Current Model for a-SiGe:H Thin Film Transistors Considering Density of States |
| title_short | Analytical Drain Current Model for a-SiGe:H Thin Film Transistors Considering Density of States |
| title_sort | analytical drain current model for a sige h thin film transistors considering density of states |
| topic | a-SiGe:H density of states current model thin film transistor simulations |
| url | https://www.mdpi.com/2079-9292/9/6/1016 |
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