Analytical Drain Current Model for a-SiGe:H Thin Film Transistors Considering Density of States

Analytical Drain Current Model for a-SiGe:H Thin Film Transistors Considering Density of States

Thin film transistors (TFTs) fabricated on flexible and large area substrates have been studied with great interest due to their future applications. Recent studies have developed new semiconductors such as a-SiGe:H for fabrication of high performance TFTs. These films have important advantages, inc...

Full description

Bibliographic Details
Main Authors:	Silvestre Salas-Rodríguez, Francisco López-Huerta, Agustín L. Herrera-May, Joel Molina-Reyes, Jaime Martínez-Castillo
Format:	Article
Language:	English
Published:	MDPI AG 2020-06-01
Series:	Electronics
Subjects:	a-SiGe:H density of states current model thin film transistor simulations
Online Access:	https://www.mdpi.com/2079-9292/9/6/1016

Similar Items

Implementasi Metode Visual-Auditory-Kinestetik dalam Tari Sigeh Penguten sebagai Tarian Tradisi Lampung
by: Apriyani Apriyani
Published: (2021-06-01)

Capas de SiGe policristalino hidrogenado y su aplicación en transistores de película delgada
by: Rodríguez, A., et al.
Published: (2004-04-01)

The Effect of Gamma Rays on the Main Static Characteristics of SiGe Transistors
by: O. V. Dvornikov, et al.
Published: (2017-12-01)

One-Transistor Dynamic Random-Access Memory Based on Gate-All-Around Junction-Less Field-Effect Transistor with a Si/SiGe Heterostructure
by: Young Jun Yoon, et al.
Published: (2020-12-01)

The main characteristics of SiGe HBTs at low temperatures
by: О. V. Dvornikov, et al.
Published: (2016-09-01)

Characterization of Mn<sub>5</sub>Ge<sub>3</sub> Contacts on a Shallow Ge/SiGe Heterostructure
by: Troy A. Hutchins-Delgado, et al.
Published: (2024-03-01)

4-Levels Vertically Stacked SiGe Channel Nanowires Gate-All-Around Transistor with Novel Channel Releasing and Source and Drain Silicide Process
by: Xiaohong Cheng, et al.
Published: (2022-03-01)

Effect of Source/Drain Electrodes on the Electrical Properties of Silicon–Tin Oxide Thin-Film Transistors
by: Xianzhe Liu, et al.
Published: (2018-05-01)

Strained Ge channel p-type metal-oxide-semiconductor field-effect transistors grown on SiââxGex/Si virtual substrates
by: Lee, Minjoo L., et al.
Published: (2003)

Isotropic Contact Properties in Monolayer GeAs Field-Effect Transistors
by: Weiqi Song, et al.
Published: (2023-11-01)

Self-Organized Ge Nanospherical Gate/SiO<sub>2</sub>/Si<sub>0.15</sub>Ge<sub>0.85</sub>–Nanosheet n-FETs Featuring High ON-OFF Drain Current Ratio
by: Po-Hsiang Liao, et al.
Published: (2019-01-01)

Improving the Gate-Induced Drain Leakage and On-State Current of Fin-Like Thin Film Transistors with a Wide Drain
by: Hsin-Hui Hu, et al.
Published: (2018-08-01)

Synthesis and Characterization of Type II Ge-Si Clathrate Films for Optoelectronic Applications
by: Rahul Kumar, et al.
Published: (2024-01-01)

Effects of Different Factors on Single Event Effects Introduced by Heavy Ions in SiGe Heterojunction Bipolar Transistor: A TCAD Simulation
by: Zheng Zhang, et al.
Published: (2023-02-01)

Thin film transistor circuits and systems /
by: Chaji, Reza, et al.
Published: (2013)

Thin-film transistor /
by: Kagan, Cherie R., 1969, et al.
Published: (2003)

First principles analysis on the stability of C, Sn atoms near the surface of Ge thin film
by: Kai TADANO, et al.
Published: (2018-02-01)

Review of Si-Based GeSn CVD Growth and Optoelectronic Applications
by: Yuanhao Miao, et al.
Published: (2021-09-01)

Monolithically Integrated Polysilicon/Oxide-Semiconductor Hybrid Thin-Film Transistors for Advanced Sensing
by: Ping-Che Liu, et al.
Published: (2023-01-01)

Enhancement in performance and reliability of transparent IGZO thin-film transistors by ITO/Ti stacked source/drain contacts
by: Li, Yuanbo, et al.
Published: (2024)

An analysis of the characteristics of insulated-gate thin-film transistors /
by: 235533 Borkan, Harold, et al.

An analysis of the characteristics of insulated-gate thin-film transistors /
by: 235533 Borkan, Harold, et al.

Advanced GeSn/SiGeSn Group IV Heterostructure Lasers
by: Nils von den Driesch, et al.
Published: (2018-06-01)

Quantifying Non‐Thermal Silicate Weathering Using Ge/Si and Si Isotopes in Rivers Draining the Yellowstone Plateau Volcanic Field, USA
by: François Gaspard, et al.
Published: (2021-11-01)

SiGe HBTs and BiCMOS Technology for Present and Future Millimeter-Wave Systems
by: Thomas Zimmer, et al.
Published: (2021-01-01)

Germanium Spherical Quantum-Dot Single-Hole Transistors With Self-Organized Tunnel Barriers and Self-Aligned Electrodes
by: Chi-Cheng Lai, et al.
Published: (2023-01-01)

Composition Dependence Structural and Optical Properties of Silicon Germanium (Si<sub>χ</sub>Ge<sub>1−χ</sub>) Thin Films
by: Syafiqa Nasir, et al.
Published: (2023-05-01)

Investigation of thermal stability of Si0.7Ge0.3Si stacked multilayer with As ion-implantation
by: Yanrong Wang, et al.
Published: (2021-01-01)

Improving ESD Protection Robustness Using SiGe Source/Drain Regions in Tunnel FET
by: Zhaonian Yang, et al.
Published: (2018-12-01)

The role of the Ge mole fraction in improving the performance of a nanoscale junctionless tunneling FET: concept and scaling capability
by: Hichem Ferhati, et al.
Published: (2018-06-01)

Gate-stack engineering for self-organized Ge-dot/SiO2/SiGe-shell MOS capacitors
by: Wei-Ting eLai, et al.
Published: (2016-02-01)

Extraordinarily Weak Temperature Dependence of the Drain Current in Small‐Molecule Schottky‐Contact‐Controlled Transistors through Active‐Layer and Contact Interplay
by: Eva Bestelink, et al.
Published: (2023-03-01)

Defect Characterization in SiGe/SOI Epitaxial Semiconductors by Positron Annihilation
by: Ferragut R, et al.
Published: (2010-01-01)

Static Thermal Coupling Factors in Multi-Finger Bipolar Transistors: Part II-Experimental Validation
by: Aakashdeep Gupta, et al.
Published: (2020-08-01)

Static Thermal Coupling Factors in Multi-Finger Bipolar Transistors: Part I—Model Development
by: Aakashdeep Gupta, et al.
Published: (2020-08-01)

FDTD analysis of direct optical integration between SiNx waveguides and Ge/SiGe multiple quantum wells on graded buffer for low-voltage optical modulators around the O-band wavelength
by: Inthanee Thongyim, et al.
Published: (2024-02-01)

A Flexible 0.18 <formula formulatype="inline"><tex Notation="TeX">$\mu{\rm m}$</tex> </formula> BiCMOS Technology Suitable for Various Applications
by: Takashi Hashimoto, et al.
Published: (2013-01-01)

Design of a 250-Gbit/s SiGe HBT Electrooptic Modulator
by: Tuhin Guha Neogi, et al.
Published: (2011-01-01)

Low Ge Content Ultra-Thin Fin Width (5nm) Monocrystalline SiGe n-Type FinFET With Low Off State Leakage and High I<sub>ON</sub>/I<sub>OFF</sub> Ratio
by: Chong-Jhe Sun, et al.
Published: (2020-01-01)

Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate
by: Reem Al-Saigh, et al.
Published: (2018-06-01)